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1. (WO2017092451) LIGHT-EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/092451 International Application No.: PCT/CN2016/097808
Publication Date: 08.06.2017 International Filing Date: 01.09.2016
IPC:
H01L 33/14 (2010.01) ,H01L 33/36 (2010.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
14
with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
天津三安光电有限公司 TIANJIN SANAN OPTOELECTRONICS CO., LTD. [CN/CN]; 中国天津市 西青区华苑产业区海泰南道20号 No.20 Haitainan Road, Huayuan New Technology Industry Development Area, Xiqing District Tianjin 300384, CN
Inventors:
杨恕帆 YANG, Shu-fan; CN
吴俊毅 WU, Chun-Yi; CN
吴超瑜 WU, Chaoyu; CN
王笃祥 WANG, Duxiang; CN
Priority Data:
201510877969.104.12.2015CN
Title (EN) LIGHT-EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREFOR
(FR) PUCE DE DIODE ÉLECTROLUMINESCENTE ET SON PROCÉDÉ DE FABRICATION
(ZH) 发光二极管芯片及其制作方法
Abstract:
(EN) Provided are a light-emitting diode chip and a manufacturing method therefor. An electrical connection layer (12) is provided on an out-light face of a light-emitting epitaxial layer, which can be separated by a dielectric material (13) and thus be disconnected. After the surface has been subjected to CMP processing, a transparent electric current extension layer (11) is plated on the extremely planar surface, thereby reducing the transverse conduction resistance of the transparent electric current extension layer and performing transverse conduction in the place of a metal extension strip.
(FR) La présente invention porte sur une puce de diode électroluminescente et son procédé de fabrication. Une couche de connexion électrique (12) est disposée sur une face de sortie de lumière d'une couche épitaxiale électroluminescente, lesquelles peuvent être séparées par une matière diélectrique et ainsi être déconnectées. Après que la surface a été soumise à un traitement de planarisation chimico-mécanique (CMP), une couche d'extension de courant électrique transparente (11) est plaquée sur la surface extrêmement plane, ce qui permet de réduire la résistance de conduction transversale de la couche d'extension de courant électrique transparente et d'effectuer une conduction transversale à la place d'une bande métallique d'extension.
(ZH) 提供一种发光二极管芯片及其制作方法,其在发光外延叠层的出光面上设置电连接层(12),可由介电材料(13)间隔从而不相连,表面经CMP处理后在极平坦的面上镀上透明电流扩展层(11),从而降低透明电流扩展层的横向传导阻值并代替金属扩展条进行横向传导。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)