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1. (WO2017092450) LIGHT-EMITTING DIODE EPITAXIAL WAFER STRUCTURE AND PREPARATION METHOD THEREOF
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/092450 International Application No.: PCT/CN2016/097807
Publication Date: 08.06.2017 International Filing Date: 01.09.2016
IPC:
H01L 33/06 (2010.01) ,H01L 33/32 (2010.01) ,H01L 33/00 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
04
with a quantum effect structure or superlattice, e.g. tunnel junction
06
within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
26
Materials of the light emitting region
30
containing only elements of group III and group V of the periodic system
32
containing nitrogen
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Applicants:
天津三安光电有限公司 TIANJIN SANAN OPTOELECTRONICS CO., LTD. [CN/CN]; 中国天津市 西青区华苑产业区海泰南道20号 No.20 Haitainan Road, Huayuan New Technology Industry Development Area, Xiqing District Tianjin 300384, CN
Inventors:
舒立明 SHU, Liming; CN
王良均 WANG, Liangjun; CN
刘晓峰 LIU, Xiaofeng; CN
张东炎 ZHANG, Dongyan; CN
叶大千 YE, Daqian; CN
王笃祥 WANG, Duxiang; CN
Priority Data:
201510891232.530.11.2015CN
Title (EN) LIGHT-EMITTING DIODE EPITAXIAL WAFER STRUCTURE AND PREPARATION METHOD THEREOF
(FR) STRUCTURE DE TRANCHE ÉPITAXIALE DE DIODE ÉLECTROLUMINESCENTE ET SON PROCÉDÉ DE PRÉPARATION
(ZH) 一种发光二极管外延片结构及制备方法
Abstract:
(EN) A light-emitting diode epitaxial wafer structure and preparation method thereof, comprising from bottom to top: a substrate (1), a buffer layer (2), an undoped gallium nitride layer (3), an N-type region (4), a multiple quantum well active region (5), an electron blocking layer (6), a P-type region (7), and a P-type contact layer (8). The invention is characterized in that: it utilizes NGaN (A1-An)/N-UGaN (B1-Bn-1) and PGaN (D1-Dn)/P-UGaN (E1-En-1) superlattice structures to form, respectively, the N-type region (4) and the P-type region (7); between the NGaN (A1-An) and N-UGaN (B1-Bn-1) of the N-type region there is inserted an SiN layer (C1-Cn-1), and between the PGaN (D1-Dn) and P-UGaN (E1-En-1) of the P-type region there is inserted an MgN layer (F1-Fn-1). By the SiN (C1-Cn-1) and MgN (F1-Fn-1) insert layers of a certain thickness exhibiting a dislocation restoration effect, the invention possesses the capability of adding Si and Mg dopants in higher concentrations when the dislocation grades are the same; further, a thin mask layer formed of SiN and MgN has a certain capability of binding electrons and holes, which can increase the existing concentration level of a two-dimensional electron gas and improve antistatic capability.
(FR) La présente invention concerne une structure de tranche épitaxiale de diode électroluminescente et son procédé de préparation, ladite structure comprenant de bas en haut : un substrat (1), une couche tampon (2), une couche de nitrure de gallium non dopée (3), une région de type N (4), une région active à puits quantiques multiples (5), une couche de blocage d'électrons (6), une région de type P (7) et une couche de contact de type P (8). L'invention est caractérisée en ce que : elle utilise des structures de super-réseau NGaN (A1-An)/N-UGaN (B1-Bn-1) et PGaN (D1-Dn)/P-UGaN (E1-En-1) afin de former, respectivement, la région de type N (4) et la région de type P (7) ; une couche SiN (C1-Cn-1) est insérée entre le NGaN (A1-An) et le N-UGaN (B1-Bn-1) de la région de type N et une couche MgN (F1-Fn-1) est insérée entre le PGaN (D1-Dn) et le P-UGaN (E1-En-1) de la région de type P. Les couches d'insert SiN (C1-Cn-1) et MgN (F1-Fn-1) d'une certaine épaisseur présentant un effet de restauration de dislocation, l'invention possède la capacité d'ajouter des dopants Si et Mg dans des concentrations plus élevées lorsque les niveaux de dislocation sont identiques ; de plus, une couche de masque mince formée de SiN et MgN offre une certaine capacité de liaison des électrons et des orifices, ce qui permet d'augmenter le niveau de concentration existant d'un gaz électronique bidimensionnel et d'améliorer la capacité antistatique.
(ZH) 一种发光二极管外延片结构及制备方法,由下至上包括:衬底(1)、缓冲层(2)、非掺氮化镓层(3)、N型区(4)、多量子阱有源区(5)、电子阻挡层(6)、P型区(7)以及P型接触层(8);其特征在于:分别采用NGaN(A1-An)/N-UGaN(B1-Bn-1)和PGaN(D1-Dn)/P-UGaN(E1-En-1)的超晶格结构形成N型区(4)和P型区(7),在N型区(4)的NGaN(A1-An)与N-UGaN(B1-Bn-1)之间插入SiN层(C1-Cn-1),在P型区(7)的PGaN(D1-Dn)和P-UGaN(E1-En-1)之间插入MgN层(F1-Fn-1)。籍由一定厚度的SiN(C1-Cn-1)和MgN(F1-Fn-1)插入层发挥修复位错的作用,在同位错级别条件下具备掺入更高浓度的Si和Mg的能力,且SiN和MgN构成的较薄掩膜层对电子和空穴具备一定的束缚能力,可提高二维电子气的存在集中度,增强抗静电能力。
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African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)