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1. (WO2017092378) SINGLE-CRYSTAL FILM BONDING BODY AND MANUFACTURING METHOD THEREFOR
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/092378 International Application No.: PCT/CN2016/091695
Publication Date: 08.06.2017 International Filing Date: 26.07.2016
IPC:
C23C 14/22 (2006.01) ,C23C 16/513 (2006.01) ,C30B 23/02 (2006.01) ,C30B 25/02 (2006.01) ,H01L 21/304 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
513
using plasma jets
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23
Single-crystal growth by condensing evaporated or sublimed materials
02
Epitaxial-layer growth
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
济南晶正电子科技有限公司 JINAN JINGZHENG ELECTRONICS CO., LTD. [CN/CN]; 中国山东省济南市 高新区舜华路750号B303-1 B303-1, 750 Shunhua Road, Jinan High-tech Zone Jinan, Shandong 250101, CN
Inventors:
胡文 HU, Wen; CN
Agent:
北京铭硕知识产权代理有限公司 MING & SURE INTELLECTUAL PROPERTY LAW FIRM; 中国北京市 海淀区温泉镇高里掌路1号院3号楼 Building 3, Yard No.1, Gaolizhang Road, Wenquan Town Haidian District, Beijing 100095, CN
Priority Data:
201510891747.504.12.2015CN
Title (EN) SINGLE-CRYSTAL FILM BONDING BODY AND MANUFACTURING METHOD THEREFOR
(FR) CORPS DE LIAISON DE FILM MONOCRISTALLIN ET PROCÉDÉ POUR SA FABRICATION
(ZH) 单晶薄膜键合体及其制造方法
Abstract:
(EN) A single-crystal film bonding body (4), comprising a silicon substrate (3), a lithium niobate single-crystal film or lithium tantalate single-crystal film (1), and a silicon-based film (2) located between the silicon substrate (3) and the lithium niobate single-crystal film or lithium tantalate single-crystal film (1), wherein the silicon-based film (2) is formed on the lithium niobate single-crystal film or lithium tantalate single-crystal film (1) through deposition, and is bonded with the silicon substrate (3) through a direct bonding method. The silicon-based film (2) is a silicon film, a silicon dioxide film or a silicon nitride film. A method for manufacturing the single-crystal film bonding body (4) is also comprised.
(FR) L'invention concerne un corps de liaison (4) de film monocristallin, comprenant un substrat (3) de silicium, un film (1) monocristallin de niobate de lithium ou un film monocristallin de tantalate de lithium et un film (2) à base de silicium situé entre le substrat (3) de silicium et le film (1) monocristallin de niobate de lithium ou le film monocristallin de tantalate de lithium, le film (2) à base de silicium étant formé par dépôt sur le film (1) monocristallin de niobate de lithium ou le film monocristallin de tantalate de lithium et lié au substrat (3) de silicium par un procédé de liaison directe. Le film (2) à base de silicium est un film de silicium, un film de dioxyde de silicium ou un film de nitrure de silicium. Un procédé pour la fabrication du corps de liaison (4) de film monocristallin est également décrit.
(ZH) 一种单晶薄膜键合体(4),包括硅基底(3)、铌酸锂单晶薄膜或钽酸锂单晶薄膜(1)以及位于硅基底(3)与铌酸锂单晶薄膜或钽酸锂单晶薄膜(1)之间的硅基薄膜(2),其中,硅基薄膜(2)通过沉积形成在铌酸锂单晶薄膜或钽酸锂单晶薄膜(1)上,并通过直接键合法与硅基底(3)进行键合。硅基薄膜(2)为硅薄膜、二氧化硅薄膜或氮化硅薄膜。还包括一种制造单晶薄膜键合体(4)的方法。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)