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1. (WO2017091258) MAGNETIC JOSEPHSON JUNCTION JMRAM MEMORY CELL AND WRITE CIRCUIT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/091258 International Application No.: PCT/US2016/048422
Publication Date: 01.06.2017 International Filing Date: 24.08.2016
IPC:
G11C 11/44 (2006.01) ,G11C 11/16 (2006.01)
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21
using electric elements
44
using super-conductive elements, e.g. cryotron
G PHYSICS
11
INFORMATION STORAGE
C
STATIC STORES
11
Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02
using magnetic elements
16
using elements in which the storage effect is based on magnetic spin effect
Applicants:
NORTHROP GRUMMAN SYSTEMS CORPORATION [US/US]; 2980 Fairview Park Drive Falls Church, Virginia 22042-4511, US
Inventors:
MILLER, Donald L.; US
MIKLICH, Andrew Hostetler; US
HERR, Anna Y.; US
HERR, Quentin P.; US
REOHR, William Robert; US
Agent:
HARRIS, Christopher P.; US
Priority Data:
14/854,99415.09.2015US
Title (EN) MAGNETIC JOSEPHSON JUNCTION JMRAM MEMORY CELL AND WRITE CIRCUIT
(FR) CELLULE DE MÉMOIRE VIVE MAGNÉTIQUE DE TYPE JOSEPHSON À JONCTION JOSEPHSON MAGNÉTIQUE À HYSTÉRÉSIS À COMMANDE DE PHASE SUPRACONDUCTRICE
Abstract:
(EN) One embodiment describes a JMRAM system comprising write circuit and JMRAM memory cell. The system includes a phase hysteretic magnetic Josephson junction (PHMJJ) which is a MJJ including outer layers of superconducting material and one or more barrier including internal thin film layers of ferromagnetic material comprising a hard ferromagnetic layer having a substantially fixed magnetic field and a soft ferromagnetic layer whose magnetization is switchable as a result of magnetic fields generated locally by orthogonal electrical currents including a write current, the PHMJJ stores one of a first binary state and a second binary state in response to the write current provided during a data write operation; wherein, in response to the PHMJJ being in the first binary state, the PHMJJ is configured to generate a spontaneous supercurrent in a conducting loop through the PHMJJ. The system also includes a directional write element configured with the write circuit to provide a directional bias current during the data write operation of the first binary state to orient the supercurrent of the PHMJJ in a predetermined direction corresponding to a read current direection. The system further includes at least one Josephson junction having a critical current and being configured to provide an output corresponding to the stored digital state in response to the read current that is provided during a read operation.
(FR) Selon un mode de réalisation, cette invention concerne un système de cellule de mémoire JMRAM. Le système comprend une jonction Josephson magnétique à hystérésis de phase (PHMJJ) qui mémorise l'un d'entre un premier état binaire et un second état binaire en réponse à un courant d'écriture fourni durant une opération d'écriture de données et pour fournir une phase supraconductrice sur la base de l'état numérique mémorisé. Le système comprend également un élément d'écriture directionnel configuré pour fournir un courant de polarisation directionnelle pendant l'opération d'écriture de données pour fournir la phase supraconductrice de la jonction PHMJJ dans une direction prédéterminée correspondant au premier état binaire. Le système comprend en outre au moins une jonction Josephson présentant un courant critique qui est fondé sur la phase supraconductrice de la jonction PHMJJ et qui est configurée pour fournir une sortie correspondant à l'état numérique mémorisé en réponse à un courant de lecture qui est fourni au cours d'une opération de lecture.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
AU2016361158CA2996621KR1020180048716EP3350808