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1. (WO2017091189) ELECTRICAL CONTACTS FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/091189 International Application No.: PCT/US2015/062078
Publication Date: 01.06.2017 International Filing Date: 23.11.2015
IPC:
H01L 43/02 (2006.01) ,H01L 43/08 (2006.01) ,H01L 43/10 (2006.01) ,H01L 43/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10
Selection of materials
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
12
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
INTEL CORPORATION [US/US]; 2200 Mission College Boulevard Santa Clara, California 95054-1549, US
WIEGAND, Christopher J. [US/US]; US (US)
GOLONZKA, Oleg [US/US]; US (US)
OGUZ, Kaan [TR/US]; US (US)
O'BRIEN, Kevin P. [US/US]; US (US)
RAHMAN, Tofizur [BD/US]; US (US)
DOYLE, Brian S. [IE/US]; US (US)
GHANI, Tahir [US/US]; US (US)
DOCZY, Mark L. [US/US]; US (US)
Inventors:
WIEGAND, Christopher J.; US
GOLONZKA, Oleg; US
OGUZ, Kaan; US
O'BRIEN, Kevin P.; US
RAHMAN, Tofizur; US
DOYLE, Brian S.; US
GHANI, Tahir; US
DOCZY, Mark L.; US
Agent:
ZAGER, Laura; US
Priority Data:
Title (EN) ELECTRICAL CONTACTS FOR MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICES
(FR) CONTACTS ÉLECTRIQUES POUR DISPOSITIFS DE MÉMOIRE VIVE MAGNÉTIQUE
Abstract:
(EN) Disclosed herein are electrical contacts for magnetoresistive random access memory (MRAM) devices and related memory structures, devices, and methods. For example, and electrical contact for an MRAM device may include: a tantalum region; a barrier region formed of a first material; and a passivation region formed of a second material and disposed between the tantalum region and the barrier region, wherein the second material includes tantalum nitride and is different from the first material.
(FR) L'invention concerne des contacts électriques pour dispositifs de mémoire vive magnétique (MRAM), et des structures de mémoire, des dispositifs et des procédés associés. Par exemple, un contact électrique pour dispositif MRAM peut comprendre : une zone en tantale ; une zone barrière formée d'un premier matériau ; et une zone de passivation formée d'un deuxième matériau et disposée entre la zone en tantale et la zone barrière, le deuxième matériau comprenant du nitrure de tantale et étant différent du premier matériau.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)
Also published as:
CN108140724EP3381064US20190027536