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1. (WO2017091152) WAFER LEVEL INTEGRATION OF HIGH POWER SWITCHING DEVICES ON CMOS DRIVER INTEGRATED CIRCUIT
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/091152 International Application No.: PCT/SG2016/050577
Publication Date: 01.06.2017 International Filing Date: 23.11.2016
Chapter 2 Demand Filed: 19.09.2017
IPC:
H01L 23/538 (2006.01) ,H01L 21/50 (2006.01) ,H01L 23/48 (2006.01) ,H01L 25/04 (2014.01) ,H01L 23/34 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
52
Arrangements for conducting electric current within the device in operation from one component to another
538
the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50
Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
Applicants:
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20-10 Connexis, Singapore 138632, SG
Inventors:
RHEE, Daniel Minwoo; SG
CHAI, Tai Chong; SG
Agent:
SPRUSON & FERGUSON (ASIA) PTE LTD; P.O. Box 1531 Robinson Road Post Office Singapore 903031, SG
Priority Data:
10201509627U23.11.2015SG
Title (EN) WAFER LEVEL INTEGRATION OF HIGH POWER SWITCHING DEVICES ON CMOS DRIVER INTEGRATED CIRCUIT
(FR) INTÉGRATION SUR TRANCHE DE DISPOSITIFS DE COMMUTATION DE FORTE PUISSANCE SUR UN CIRCUIT INTÉGRÉ D'ATTAQUE CMOS
Abstract:
(EN) A semiconductor package module and the method for its fabrication are provided. The semiconductor package module includes a substrate, a driver integrated circuit (IC), one or more power switching devices and one or more highly conductive clips. Each of the one or more switching devices is physically integrated in the semiconductor package module at a wafer level and has a gate connected to the driver IC by a gate-to-driver interconnection. Each of the one or more highly conductive clips is connected to a source of a corresponding one of the one or more power switching devices by a source-to-clip interconnection. Also, each of the one or more highly conductive clips has a first surface planarly located in the semiconductor package with a similar first surface of the driver IC for co-bonding of the source-to- clip interconnections and the gate-to-driver interconnections.
(FR) L'invention concerne un module de boîtier de semi-conducteur et son procédé de fabrication. Le module de boîtier de semi-conducteur comprend un substrat, un circuit intégré (CI) d'attaque, un ou plusieurs dispositifs de commutation de puissance et une ou plusieurs broches fortement conductrices. Le ou chacun desdits dispositifs de commutation est physiquement intégré dans le module de boîtier de semi-conducteur par intégration sur tranche et possède une grille connectée au CI d'attaque par une interconnexion grille-circuit d'attaque. La ou chacune desdites broches fortement conductrices est connectée à une source d'un dispositif de commutation de puissance correspondant dudit ou desdits dispositifs de commutation de puissance par une interconnexion source-broche. La ou chacune desdites broches fortement conductrices présente une première surface plane située dans le boîtier de semi-conducteur avec une première surface similaire du CI d'attaque pour un soudage conjoint des interconnexions source-broche et des interconnexions grille-circuit d'attaque.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)