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1. (WO2017090889) CMP SLURRY COMPOSITION AND ORGANIC FILM POLISHING METHOD USING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090889 International Application No.: PCT/KR2016/011624
Publication Date: 01.06.2017 International Filing Date: 17.10.2016
IPC:
C09K 3/14 (2006.01) ,H01L 21/304 (2006.01) ,H01L 21/306 (2006.01)
C CHEMISTRY; METALLURGY
09
DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
K
MATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
3
Materials not provided for elsewhere
14
Anti-slip materials; Abrasives
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
Applicants:
삼성에스디아이 주식회사 SAMSUNG SDI CO., LTD. [KR/KR]; 경기도 용인시 기흥구 공세로 150-20 150-20, Gongse-ro, Giheung-gu Yongin-si Gyeonggi-do 17084, KR
Inventors:
강동헌 KANG, Dong Hun; KR
김정희 KIM, Jeong Hee; KR
최정민 CHOI, Jung Min; KR
유용식 YOO, Yong Sik; KR
Agent:
특허법인 아주 AJU INT'L LAW & PATENT GROUP; 서울시 서초구 사임당로 174, 강남미래타워 12-13층 12-13th Floor, Gangnam Mirae Tower, 174 Saimdang- Ro Seocho-Gu Seoul 06627, KR
Priority Data:
10-2015-016679326.11.2015KR
Title (EN) CMP SLURRY COMPOSITION AND ORGANIC FILM POLISHING METHOD USING SAME
(FR) COMPOSITION DE PÂTE CMP ET PROCÉDÉ DE POLISSAGE DE FILM ORGANIQUE L'UTILISANT
(KO) CMP 슬러리 조성물 및 이를 이용한 유기막 연마방법
Abstract:
(EN) The present invention relates to a CMP slurry composition containing: an oxidant comprising an iron component; an organic acid having one carboxyl group; and water, and to an organic film polishing method using the same.
(FR) La présente invention concerne une composition de pâte CMP contenant un oxydant comprnant un constituant de fer, un acide organique possédant un groupe carboxyle, et de l'eau, ainsi qu'un procédé de polissage de film organique l'utilisant.
(KO) 본 발명은 철 성분을 포함하는 산화제; 1개의 카르복시기를 갖는 유기산; 및 물로 이루어진 CMP 슬러리 조성물 및 이를 이용한 유기막 연마 방법에 관한 것이다.
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)
Also published as:
CN109153907