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1. (WO2017090739) SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090739 International Application No.: PCT/JP2016/085001
Publication Date: 01.06.2017 International Filing Date: 25.11.2016
IPC:
H01L 43/08 (2006.01) ,G11B 5/39 (2006.01) ,H01L 21/8246 (2006.01) ,H01L 27/105 (2006.01) ,H01L 29/82 (2006.01) ,H03B 15/00 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43
Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08
Magnetic-field-controlled resistors
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127
Structure or manufacture of heads, e.g. inductive
33
Structure or manufacture of flux-sensitive heads
39
using magneto-resistive devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8232
Field-effect technology
8234
MIS technology
8239
Memory structures
8246
Read-only memory structures (ROM)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
82
controllable by variation of the magnetic field applied to the device
H ELECTRICITY
03
BASIC ELECTRONIC CIRCUITRY
B
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
15
Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using super-conductivity effects
Applicants:
TDK株式会社 TDK CORPORATION [JP/JP]; 東京都港区芝浦三丁目9番1号 3-9-1, Shibaura, Minato-ku, Tokyo 1080023, JP
Inventors:
塩川 陽平 SHIOKAWA Yohei; JP
佐々木 智生 SASAKI Tomoyuki; JP
Agent:
棚井 澄雄 TANAI Sumio; JP
荒 則彦 ARA Norihiko; JP
飯田 雅人 IIDA Masato; JP
荻野 彰広 OGINO Akihiro; JP
Priority Data:
2015-23233427.11.2015JP
2016-05307216.03.2016JP
2016-05605818.03.2016JP
2016-21053127.10.2016JP
2016-21053327.10.2016JP
Title (EN) SPIN CURRENT MAGNETIZATION REVERSAL ELEMENT, MAGNETORESISTANCE EFFECT ELEMENT, AND MAGNETIC MEMORY
(FR) ÉLÉMENT D’INVERSION DE MAGNÉTISATION DE COURANT DE SPIN, ÉLÉMENT À EFFET DE MAGNÉTORÉSISTANCE, ET MÉMOIRE MAGNÉTIQUE
(JA) スピン流磁化反転素子、磁気抵抗効果素子および磁気メモリ
Abstract:
(EN) This spin current magnetization reversal element comprises: a first ferromagnetic metal layer that has a variable magnetization direction; and spin orbit torque wiring that is joined to a first surface of the first ferromagnetic metal layer and that extends in a second direction that intersects a first direction, which is the direction normal to the first ferromagnetic metal layer. The spin orbit torque wiring comprises: a pure spin current generating part that is joined to the first ferromagnetic metal layer; and a low-resistance part that is connected to both second-direction ends of the pure spin current generating part 2A and that comprises a material that has a lower electrical resistivity than the pure spin current generating part. The pure spin current generating part is formed such that the area of a cross-section thereof that is orthogonal to the first direction increases continuously or in stages in the first direction with increasing distance from a joining surface that is joined to the first ferromagnetic metal layer.
(FR) L’élément d’inversion de magnétisation de courant de spin de l’invention est équipé : d’une première couche métallique ferromagnétique de direction de magnétisation variable ; et d’un câblage de couple spin-orbite qui se prolonge dans une seconde direction croisant une première direction consistant en une direction perpendiculaire à la surface de la première couche métallique ferromagnétique, et qui est lié à la première face de la première couche métallique ferromagnétique (1). Le câblage de couple spin-orbite est constitué d’une partie génération de courant de spin pure liée à la première couche métallique ferromagnétique, et d’une partie faible résistance connectée aux deux extrémités de la partie génération de courant de spin pure dans la seconde direction, et constituée d’un matériau de plus faible résistivité électrique que la partie génération de courant de spin pure. La partie génération de courant de spin pure est formée de sorte que la surface d’un plan transversal perpendiculaire à la première direction s’agrandit continuellement et/ou graduellement, au fur et à mesure de l’éloignement d’une face de liaison liée à la première couche métallique ferromagnétique dans une première direction.
(JA) このスピン流磁化反転素子は、磁化方向が可変な第1強磁性金属層と、第1強磁性金属層の面直方向である第1方向に対して交差する第2方向に延在し、第1強磁性金属層1の第1面に接合するスピン軌道トルク配線と、を備え、スピン軌道トルク配線は、第1強磁性金属層に接合する純スピン流発生部と、第2方向における純スピン流発生部2Aの両端に接続され、純スピン流発生部よりも電気抵抗率が小さい材料からなる低抵抗部とからなり、純スピン流発生部は、第1方向に直交する断面の面積が第1方向において第1強磁性金属層に接合する接合面から遠ざかるにつれて、連続的に及び/又は段階的に大きくなるように形成されてなる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108292704EP3382768US20180350417