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1. (WO2017090606) GAS BARRIER FILM, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE USING SAME
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090606 International Application No.: PCT/JP2016/084592
Publication Date: 01.06.2017 International Filing Date: 22.11.2016
IPC:
B32B 9/00 (2006.01) ,B32B 27/00 (2006.01) ,C23C 14/48 (2006.01) ,H01L 51/50 (2006.01) ,H05B 33/02 (2006.01) ,H05B 33/04 (2006.01) ,H05B 33/10 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
32
LAYERED PRODUCTS
B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9
Layered products essentially comprising a particular substance not covered by groups B32B11/-B32B29/137
B PERFORMING OPERATIONS; TRANSPORTING
32
LAYERED PRODUCTS
B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
27
Layered products essentially comprising synthetic resin
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
48
Ion implantation
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
02
Details
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
02
Details
04
Sealing arrangements
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
10
Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Applicants:
コニカミノルタ株式会社 KONICA MINOLTA, INC. [JP/JP]; 東京都千代田区丸の内二丁目7番2号 2-7-2, Marunouchi, Chiyoda-ku, Tokyo 1007015, JP
Inventors:
八代 晋之介 YASHIRO, Shinnosuke; JP
森 孝博 MORI, Takahiro; JP
Agent:
特許業務法人光陽国際特許事務所 KOYO INTERNATIONAL PATENT FIRM; 東京都千代田区有楽町一丁目1番3号 東京宝塚ビル17階 17F., Tokyo Takarazuka Bldg., 1-1-3, Yurakucho, Chiyoda-ku, Tokyo 1000006, JP
Priority Data:
2015-22839624.11.2015JP
Title (EN) GAS BARRIER FILM, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC DEVICE USING SAME
(FR) FILM DE BARRIÈRE VIS-À-VIS DES GAZ, PROCÉDÉ POUR SA FABRICATION, ET DISPOSITIF ÉLECTRONIQUE L'UTILISANT
(JA) ガスバリアーフィルム、その製造方法及びそれを用いた電子デバイス
Abstract:
(EN) The present invention addresses the problem of providing a gas barrier film having markedly improved gas barrier properties, a method for manufacturing the same, and an electronic device using the same. A gas barrier film according to the present invention is characterized in that: at least a first gas barrier layer and a second gas barrier layer are laminated on a base material; the first gas barrier layer contains at least silicon (Si); with respect to the total amount of oxygen atoms, nitrogen atoms, and silicon atoms that are present at a top surface region of the first gas barrier layer, the abundance ratio of the oxygen atoms is within a range of 60-75%, the abundance ratio of the nitrogen atoms is within a range of 0-10%, and the abundance ratio of the silicon atoms is within a range of 25-35%; the film density at the top surface region of the first gas barrier layer is within a range of 2.4-4.0 g/cm3; and the second gas barrier layer is a layer containing a transition metal of group 3 to group 11 of the long periodic table.
(FR) La présente invention vise à procurer un film de barrière vis-à-vis des gaz ayant une amélioration remarquable des propriétés de barrière vis-à-vis des gaz, son procédé de fabrication, et un dispositif électronique l'utilisant. A cet effet, la présente invention porte sur un film de barrière vis-à-vis des gaz, lequel film est caractérisé en ce que : au moins une première couche de barrière vis-à-vis des gaz et une seconde couche de barrière vis-à-vis des gaz sont stratifiées sur un matériau de base ; la première couche de barrière vis-à-vis des gaz contient au moins du silicium (Si) ; par rapport à la quantité totale d'atomes d'oxygène et d'atomes de silicium qui sont présents dans la région de surface supérieure de la première couche de barrière vis-à-vis des gaz, le rapport des teneurs des atomes d'oxygène se situe à l'intérieur d'une plage de 60 à 75 %, le rapport des teneurs des atomes d'azote se situe à l'intérieur d'une plage de 0 à 10 %, et le rapport des teneurs des atomes de silicium se situe à l'intérieur d'une plage de 25 à 35 % ; la densité de film dans la région de surface supérieure de la première couche de barrière vis-à-vis des gaz se situe à l'intérieur d'une plage de 2,4 à 4,0 g/cm3 ; et la seconde couche de barrière vis-à-vis des gaz est une couche contenant un métal de transition du groupe 3 au groupe 11 de la forme longue du tableau périodique des éléments.
(JA) 本発明の課題は、ガスバリアー性が顕著に改善されたガスバリアーフィルム、その製造方法及びそれを用いた電子デバイスを提供することである。 本発明のガスバリアーフィルムは、基材上に少なくとも第1のガスバリアー層及び第2のガスバリアー層が積層されており、前記第1のガスバリアー層は、少なくともケイ素(Si)を含有し、かつ当該第1のガスバリアー層の表層部における、酸素原子、窒素原子及びケイ素原子の存在量全体に対する、前記酸素原子の存在割合が60~75%、前記窒素原子の存在割合が0~10%、前記ケイ素原子の存在割合が25~35%の範囲内であり、かつ、前記第1のガスバリアー層の表層部における膜密度が、2.4~4.0g/cmの範囲内であり、前記第2のガスバリアー層は、長周期型周期表の第3族~第11族の遷移金属を含有する層であることを特徴とする。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)