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1. (WO2017090591) GAS BARRIER FILM AND ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090591 International Application No.: PCT/JP2016/084568
Publication Date: 01.06.2017 International Filing Date: 22.11.2016
IPC:
B32B 9/00 (2006.01) ,B32B 7/02 (2006.01) ,C23C 14/08 (2006.01) ,C23C 14/10 (2006.01) ,C23C 14/20 (2006.01) ,C23C 14/34 (2006.01) ,H01L 51/50 (2006.01) ,H05B 33/10 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
32
LAYERED PRODUCTS
B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9
Layered products essentially comprising a particular substance not covered by groups B32B11/-B32B29/137
B PERFORMING OPERATIONS; TRANSPORTING
32
LAYERED PRODUCTS
B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
7
Layered products characterised by the relation between layers, i.e. products essentially comprising layers having different physical properties or products characterised by the interconnection of layers
02
in respect of physical properties, e.g. hardness
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
10
Glass or silica
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
14
Metallic material, boron or silicon
20
on organic substrates
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
10
Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
Applicants:
コニカミノルタ株式会社 KONICA MINOLTA, INC. [JP/JP]; 東京都千代田区丸の内二丁目7番2号 2-7-2, Marunouchi, Chiyoda-ku, Tokyo 1007015, JP
Inventors:
西尾 昌二 NISHIO, Shoji; JP
森 孝博 MORI, Takahiro; JP
Agent:
特許業務法人光陽国際特許事務所 KOYO INTERNATIONAL PATENT FIRM; 東京都千代田区有楽町一丁目1番3号 東京宝塚ビル17階 17F., Tokyo Takarazuka Bldg., 1-1-3, Yurakucho, Chiyoda-ku, Tokyo 1000006, JP
Priority Data:
2015-22838324.11.2015JP
Title (EN) GAS BARRIER FILM AND ELECTRONIC DEVICE
(FR) FILM DOTÉ DE PROPRIÉTÉS DE BARRIÈRE CONTRE LES GAZ ET DISPOSITIF ÉLECTRONIQUE
(JA) ガスバリアー性フィルム及び電子デバイス
Abstract:
(EN) The present invention addresses the problem of providing: a gas barrier film which exhibits excellent gas barrier performance even if thin, and excellent bending resistance; and an electronic device which is provided with said gas barrier film. This gas barrier film 1 has a gas barrier layer 3 provided on a substrate 2, and is characterized in that: the gas barrier layer 3 has, in at least the thickness direction, a mixed region including a non-transition metal M1 and a transition metal M2; in the mixed region, the value of the ratio of the atomic ratio of the transition metal M2 to the atomic ratio of the non-transition metal M1 in the thickness direction of the gas barrier layer 3, said atomic ratios being measured using X-ray photoelectron spectroscopy, is in the range of 0.02-49; the region in which the value of the aforementioned ratio is in the aforementioned range continues in the thickness direction of the gas barrier layer 3 to a thickness of at least 3 nm; and the thickness of the gas barrier layer 3 is in the range of 5-1000 nm.
(FR) L’invention concerne un film doté de propriétés de barrière contre les gaz, lequel présente d'excellentes propriétés de barrière contre les gaz même s’il est mince, et lequel possède une résistance supérieure à la flexion. L’invention concerne également un dispositif électronique mettant en oeuvre ce film doté de propriétés de barrière contre les gaz. Ce film (1) doté de propriétés de barrière contre les gaz possède une couche (3) barrière contre les gaz située sur un substrat (2). Ce film (1) doté de propriétés de barrière contre les gaz se caractérise en ce que la couche (3) barrière contre les gaz possède, du moins dans le sens de l’épaisseur, une région mixte contenant un métal de non-transition (M1) et un métal de transition (M2). Dans la région mixte, la valeur d’un rapport entre le nombre d'atomes de métal de transition (M2) et le nombre d'atomes de métal de non-transition (M1) telle que mesurée par spectroscopie photoélectronique à rayons X au moins dans le sens de l’épaisseur de la couche (3) barrière contre les gaz, est comprise dans la plage 0,02 à 49. En outre, la région dans la plage susmentionnée, a une épaisseur dans la direction de l’épaisseur de la couche (3) barrière contre les gaz, égale ou supérieure à 3nm, et l’épaisseur de la couche (3) barrière contre les gaz est comprise entre 5 et 1000nm.
(JA) 本発明の課題は、薄くてもガスバリアー性能に優れ、かつ耐屈曲性に優れたガスバリアー性フィルム及び当該ガスバリアー性フィルムを具備する電子デバイスを提供することである。当該ガスバリアー性フィルム1は、基材2上に、ガスバリアー層3を有するガスバリアー性フィルム1であって、ガスバリアー層3が、少なくとも厚さ方向において、非遷移金属M1及び遷移金属M2を含有する混合領域を有し、混合領域は、ガスバリアー層3の厚さ方向において、X線光電子分光法によって測定される非遷移金属M1の原子数比率に対する遷移金属M2の原子数比率の比の値が、0.02~49の範囲内、かつ当該範囲内の領域が、ガスバリアー層3の厚さ方向に連続して層厚3nm以上であり、ガスバリアー層3の層厚が、5~1000nmの範囲内であることを特徴とする。
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African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)