Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017090579) MULTILAYER GAS BARRIER FILM AND ELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090579 International Application No.: PCT/JP2016/084530
Publication Date: 01.06.2017 International Filing Date: 22.11.2016
IPC:
B32B 9/00 (2006.01) ,C23C 14/08 (2006.01) ,H01L 51/50 (2006.01) ,H05B 33/02 (2006.01) ,H05B 33/04 (2006.01)
B PERFORMING OPERATIONS; TRANSPORTING
32
LAYERED PRODUCTS
B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9
Layered products essentially comprising a particular substance not covered by groups B32B11/-B32B29/137
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
02
Details
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
B
ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR
33
Electroluminescent light sources
02
Details
04
Sealing arrangements
Applicants:
コニカミノルタ株式会社 KONICA MINOLTA, INC. [JP/JP]; 東京都千代田区丸の内二丁目7番2号 2-7-2, Marunouchi, Chiyoda-ku, Tokyo 1007015, JP
Inventors:
八代 晋之介 YASHIRO, Shinnosuke; JP
森 孝博 MORI, Takahiro; JP
Agent:
特許業務法人光陽国際特許事務所 KOYO INTERNATIONAL PATENT FIRM; 東京都千代田区有楽町一丁目1番3号 東京宝塚ビル17階 17F., Tokyo Takarazuka Bldg., 1-1-3, Yurakucho, Chiyoda-ku, Tokyo 1000006, JP
Priority Data:
2015-22839824.11.2015JP
Title (EN) MULTILAYER GAS BARRIER FILM AND ELECTRONIC DEVICE
(FR) FILM BARRIÈRE AUX GAZ MULTICOUCHE ET DISPOSITIF ÉLECTRONIQUE
(JA) 積層型ガスバリアー性フィルム及び電子デバイス
Abstract:
(EN) The present invention addresses the problem of providing a multilayer gas barrier film having high gas barrier properties, and an electronic device. This multilayer gas barrier film is characterized in that at least a first gas barrier layer, an interaction layer, and a second gas barrier layer are layered in this order on a substrate, at least one of the first gas barrier layer and the second gas barrier layer has, in the thickness direction thereof, a B region containing a non-transition metal M1 and an A region containing a transition metal M2 in at least the thickness direction, and said multilayer gas barrier film comprises a mixed region that is continuous for 5 nm or more in the thickness direction and in which the value (M2/M1) of the atomic ratio of the transition metal M2 to the non-transition metal M1 is in the range of 0.02-49.
(FR) La présente invention concerne un film barrière aux gaz multicouche présentant de bonnes propriétés de barrière aux gaz, et un dispositif électronique. Ce film barrière aux gaz multicouche est caractérisé en ce qu'au moins une première couche barrière aux gaz, une couche d'interaction et une seconde couche barrière aux gaz sont stratifiées dans cet ordre sur un substrat, la première couche barrière aux gaz et/ou la seconde couche barrière aux gaz ayant, dans la direction de son épaisseur, une région B contenant un métal de non-transition M1 et une région A contenant un métal de transition M2 dans au moins la direction d'épaisseur, et ledit film barrière aux gaz multicouche comprenant une région mixte qui est continue sur au moins 5 nm dans la direction de l'épaisseur et dans lequel la valeur (M2/M1) du rapport atomique du métal de transition M2 sur le métal de non-transition M1 est dans la plage de 0,02 à 49.
(JA) 本発明の課題は、高いガスバリアー性を備えた積層型ガスバリアー性フィルムと電子デバイスを提供することである。 本発明の積層型ガスバリアー性フィルムは、基材上に、少なくとも第1のガスバリアー層、相互作用層、及び第2のガスバリアー層がこの順で積層され、前記第1のガスバリアー層及び第2のガスバリアー層の少なくとも一方の1層が、厚さ方向において、少なくとも厚さ方向において、非遷移金属M1を含有するB領域と、遷移金属M2を含有するA領域を有し、更に、前記非遷移金属M1に対する遷移金属M2の原子数比の値(M2/M1)が、0.02~49の範囲内にある混合領域を、厚さ方向に連続して5nm以上有することを特徴とする。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)