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1. (WO2017090524) WET ETCHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090524 International Application No.: PCT/JP2016/084251
Publication Date: 01.06.2017 International Filing Date: 18.11.2016
IPC:
H01L 21/306 (2006.01) ,H01L 21/308 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
308
using masks
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
新崎 庸平 SHINZAKI Yohhei; --
岡島 弘明 OKAJIMA Hiroaki; --
荻野 和基 OGINO Kazuki; --
Agent:
特許業務法人暁合同特許事務所 AKATSUKI UNION PATENT FIRM; 愛知県名古屋市中区栄二丁目1番1号 日土地名古屋ビル5階 5th Floor, Nittochi Nagoya Bldg., 1-1, Sakae 2-chome, Naka-ku, Nagoya-shi, Aichi 4600008, JP
Priority Data:
2015-23144327.11.2015JP
Title (EN) WET ETCHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) PROCÉDÉ DE GRAVURE HUMIDE ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEUR
(JA) ウェットエッチング方法、及び半導体装置の製造方法
Abstract:
(EN) A wet etching method according to the present invention for processing, into a desired predetermined pattern, a laminate which is formed of a plurality of metal films laminated on a support substrate and includes a naturally oxidized Ti film as an uppermost layer, comprises: a resist formation step for forming, on the laminate, a resist film having a shape corresponding to the predetermined pattern; an uppermost-layer selective etching step for etching mainly the uppermost layer exposed from the resist film by bringing an uppermost-layer selective liquid chemical, with which the uppermost layer is selectively etched, into contact with the laminate; and a finishing etching step for etching the laminate into a desired shape by bringing a finishing liquid chemical, with which all the layers including the uppermost layer are etched, into contact with the laminate.
(FR) Un procédé de gravure humide selon la présente invention permettant de traiter, en une configuration désirée prédéterminée, un stratifié qui est constitué d'une pluralité de films métalliques stratifiés sur un substrat de support et comprend un film de Ti naturellement oxydé comme couche supérieure, comprend : une étape de formation de réserve permettant de former, sur le stratifié, un film de réserve ayant une forme correspondant à la configuration prédéterminée ; une étape de gravure sélective de couche supérieure permettant de graver principalement la couche supérieure exposée à partir du film de réserve en amenant un produit chimique liquide sélectif de couche supérieure, avec lequel la couche supérieure est gravée de manière sélective, en contact avec le stratifié ; et une étape de gravure de finition permettant de graver le stratifié en une forme souhaitée en amenant un produit chimique liquide de finition, avec lequel toutes les couches comprenant la couche supérieure sont gravées, en contact avec le stratifié.
(JA) 本発明のウェットエッチング方法は、複数の金属膜が支持基板上に積層されたものからなり、最上層として自然酸化されたTi膜を含む積層物を目的の所定パターンに加工するウェットエッチング方法であって、前記積層物上に前記所定パターンに対応した形状のレジスト膜が形成されるレジスト形成工程、前記最上層を選択的にエッチングする最上層選択的薬液を、前記積層物に接触させて、主として前記レジスト膜から露出した前記最上層をエッチングする最上層選択的エッチング工程、前記最上層を含むすべての層をエッチングする仕上げ薬液を、前記積層物に接触させて、前記積層物が目的の形となるまでエッチングする仕上げエッチング工程を備える。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108352315