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1. (WO2017090505) SUBSTRATE LIQUID TREATMENT DEVICE, SUBSTRATE LIQUID TREATMENT METHOD, AND MEMORY MEDIUM
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090505 International Application No.: PCT/JP2016/084104
Publication Date: 01.06.2017 International Filing Date: 17.11.2016
IPC:
H01L 21/306 (2006.01) ,H01L 21/304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306
Chemical or electrical treatment, e.g. electrolytic etching
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号 3-1, Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
Inventors:
小佐井 一樹 KOSAI Kazuki; JP
甲斐 義広 KAI Yoshihiro; JP
五師 源太郎 GOSHI Gentaro; JP
小宮 洋司 KOMIYA Hiroshi; JP
藤本 誠也 FUJIMOTO Seiya; JP
大塚 貴久 OTSUKA Takahisa; JP
Agent:
永井 浩之 NAGAI Hiroshi; JP
中村 行孝 NAKAMURA Yukitaka; JP
佐藤 泰和 SATO Yasukazu; JP
朝倉 悟 ASAKURA Satoru; JP
森 秀行 MORI Hideyuki; JP
Priority Data:
2015-22883324.11.2015JP
Title (EN) SUBSTRATE LIQUID TREATMENT DEVICE, SUBSTRATE LIQUID TREATMENT METHOD, AND MEMORY MEDIUM
(FR) DISPOSITIF DE TRAITEMENT LIQUIDE DE SUBSTRAT, PROCÉDÉ DE TRAITEMENT LIQUIDE DE SUBSTRAT ET SUPPORT MÉMOIRE
(JA) 基板液処理装置、基板液処理方法および記憶媒体
Abstract:
(EN) A substrate treatment device, provided with a substrate holding part (31) for holding a substrate (W); an outer nozzle (45) for discharging a treatment liquid toward the surface of the substrate from a position further on the outside than the outer peripheral edge of the substrate held by the substrate holding part, so that at least the center part of the surface of the substrate is covered by a liquid coat of the discharged treatment liquid; and an actuator (46, 90) capable of changing the height position or the elevation angle of the outer nozzle.
(FR) L'invention concerne un dispositif de traitement de substrat comportant une partie de maintien de substrat (31) destinée à maintenir un substrat (W) ; une buse externe (45) permettant d'expulser un liquide de traitement vers la surface du substrat depuis une position située plus à l'extérieur que le bord périphérique externe du substrat maintenu par la partie de maintien de substrat, de manière à ce qu'au moins la partie centrale de la surface du substrat soit recouverte d'une couche liquide du liquide de traitement expulsé ; et un actionneur (46, 90) permettant de modifier la position en hauteur ou l'angle d'élévation de la buse extérieure.
(JA) 基板処理装置は、基板(W)を保持する基板保持部(31)と、基板保持部により保持された基板の外周縁よりも外側の位置から、基板の表面の少なくとも中心部が吐出された処理液の液膜により覆われるように、基板の表面に向けて処理液を吐出する外ノズル(45)と、外ノズルの高さ位置または俯仰角を変更することができるアクチュエータ(46,90)とを備える。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
CN108292599KR1020180084797US20180337067