Search International and National Patent Collections
Some content of this application is unavailable at the moment.
If this situation persists, please contact us atFeedback&Contact
1. (WO2017090485) SUBSTRATE FOR MASK BLANK, SUBSTRATE WITH ATTACHED MULTILAYER REFLECTION FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090485 International Application No.: PCT/JP2016/083829
Publication Date: 01.06.2017 International Filing Date: 15.11.2016
IPC:
G03F 1/24 (2012.01) ,G03F 1/32 (2012.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
22
Masks or mask blanks for imaging by radiation of 100 nm or shorter wavelength, e.g. X-ray masks, extreme ultra-violet [EUV] masks; Preparation thereof
24
Reflection masks; Preparation thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1
Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
26
Phase shift masks [PSM]; PSM blanks; Preparation thereof
32
Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
HOYA株式会社 HOYA CORPORATION [JP/JP]; 東京都新宿区西新宿六丁目10番1号 6-10-1 Nishi-Shinjuku, Shinjuku-ku, Tokyo 1608347, JP
Inventors:
池邊 洋平 IKEBE, Yohei; JP
笑喜 勉 SHOKI, Tsutomu; JP
Agent:
特許業務法人 津国 TSUKUNI & ASSOCIATES; 東京都千代田区麹町5-3-1 麹町ビジネスセンター Kojimachi Business Center, 5-3-1, Kojimachi, Chiyoda-ku, Tokyo 1020083, JP
山村 大介 YAMAMURA, Daisuke; JP
Priority Data:
2015-23144427.11.2015JP
Title (EN) SUBSTRATE FOR MASK BLANK, SUBSTRATE WITH ATTACHED MULTILAYER REFLECTION FILM, REFLECTIVE MASK BLANK, REFLECTIVE MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
(FR) SUBSTRAT POUR ÉBAUCHE DE MASQUE, SUBSTRAT AUQUEL EST FIXÉ UN FILM MULTICOUCHE DE RÉFLEXION, ÉBAUCHE DE MASQUE RÉFLÉCHISSANT, MASQUE RÉFLÉCHISSANT, ET PROCÉDÉ DE FABRICATION D'UN DISPOSITIF À SEMI-CONDUCTEUR
(JA) マスクブランク用基板、多層反射膜付き基板、反射型マスクブランク及び反射型マスク、並びに半導体装置の製造方法
Abstract:
(EN) Provided is a reflective mask that is capable of reducing out-of-band light when a predetermined pattern is transferred onto a wafer with exposure light using EUV light in a process for manufacturing a semiconductor device. This substrate for a mask blank is provided with a base film on a substrate, the substrate for a mask blank being characterized in that the base film is formed of a material having a refractive index smaller than that of the substrate in the wavelength range of 190 nm to 280 nm inclusive, and the reflectivity of the base film disposed on the surface of the substrate in the wavelength range of 190 nm to 280 nm inclusive is less than the reflectivity of the substrate.
(FR) L'invention concerne un masque réfléchissant qui est capable de réduire la lumière hors bande lorsqu'un motif prédéterminé est transféré sur une tranche à l'aide d'une lumière d'exposition utilisant une lumière UVE dans un processus de fabrication d'un dispositif à semi-conducteur. Le présent substrat pour ébauche de masque comporte un film de support sur un substrat, le substrat pour ébauche de masque étant caractérisé en ce que le film de support est formé d'un matériau présentant un indice de réfraction inférieur à celui du substrat dans la gamme de longueurs d'ondes allant de 190 nm à 280 nm inclus, et en ce que la réflectivité du film de support disposé sur la surface du substrat dans la gamme de longueurs d'ondes allant de 190 nm à 280 nm inclus est inférieure à la réflectivité du substrat.
(JA) 半導体装置の製造工程において、EUV光を用いた露光光によってウエハ上に所定のパターンを転写する際に、アウトオブバンド光を低減することのできる反射型マスクを提供する。 基板上に下地膜を備えるマスクブランク用基板であって、190nm以上280nm以下の波長範囲において、前記下地膜は、前記基板よりも小さい屈折率を有する材料で形成され、190nm以上280nm以下の波長範囲における前記基板の表面に配置された前記下地膜の反射率が、前記基板の反射率より小さいことを特徴とするマスクブランク用基板である。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020180086457US20180356719