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1. (WO2017090481) SPUTTERING TARGET
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090481 International Application No.: PCT/JP2016/083777
Publication Date: 01.06.2017 International Filing Date: 15.11.2016
Chapter 2 Demand Filed: 06.09.2017
IPC:
C23C 14/34 (2006.01) ,C22C 1/04 (2006.01) ,C22C 1/05 (2006.01) ,C22C 1/10 (2006.01) ,C22C 5/04 (2006.01) ,C22C 19/07 (2006.01) ,G11B 5/851 (2006.01)
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
1
Making non-ferrous alloys
04
by powder metallurgy
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
1
Making non-ferrous alloys
04
by powder metallurgy
05
Mixtures of metal powder with non-metallic powder
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
1
Making non-ferrous alloys
10
Alloys containing non-metals
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
5
Alloys based on noble metals
04
Alloys based on a platinum group metal
C CHEMISTRY; METALLURGY
22
METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
C
ALLOYS
19
Alloys based on nickel or cobalt
07
based on cobalt
G PHYSICS
11
INFORMATION STORAGE
B
INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5
Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
84
Processes or apparatus specially adapted for manufacturing record carriers
851
Coating a support with a magnetic layer by sputtering
Applicants:
田中貴金属工業株式会社 TANAKA KIKINZOKU KOGYO K.K. [JP/JP]; 東京都千代田区丸の内2丁目7-3 東京ビルディング TOKYO BUILDING, 7-3, Marunouchi 2-chome, Chiyoda-ku, Tokyo 1006422, JP
国立大学法人東北大学 TOHOKU UNIVERSITY [JP/JP]; 宮城県仙台市青葉区片平二丁目1番1号 2-1-1, Katahira, Aoba-ku, Sendai-shi, Miyagi 9808577, JP
Inventors:
タム キム コング THAM, Kim Kong; JP
櫛引 了輔 KUSHIBIKI, Ryousuke; JP
山本 俊哉 YAMAMOTO, Toshiya; JP
齊藤 伸 SAITO, Shin; JP
日向 慎太朗 HINATA, Shintaro; JP
Agent:
松山 圭佑 MATSUYAMA, Keisuke; JP
高矢 諭 TAKAYA, Satoshi; JP
牧野 剛博 MAKINO, Takehiro; JP
藤田 崇 FUJITA, Takashi; JP
Priority Data:
2015-23244627.11.2015JP
Title (EN) SPUTTERING TARGET
(FR) CIBLE DE PULVÉRISATION CATHODIQUE
(JA) スパッタリングターゲット
Abstract:
(EN) The present invention provides a sputtering target with which it is possible to produce a magnetic thin film having a large coercive force Hc. Provided is a sputtering target that contains metallic Co, metallic Pt, and an oxide and that does not contain metallic Cr except inevitable impurities, wherein the oxide has a melting point of up to 600 °C, and the standard Gibbs free energy ΔGf of formation of the oxide with respect to 1 mol O2 is -1000 to -500 kJ/mol O2, inclusive.
(FR) La présente invention concerne une cible de pulvérisation cathodique avec laquelle il est possible de produire un film mince magnétique ayant une grande force coercitive Hc. Plus précisément, l'invention concerne une cible de pulvérisation cathodique qui contient du Co métallique, du Pt métallique et un oxyde et qui ne contient pas de Cr métallique à l'exception d'impuretés inévitables, l'oxyde ayant un point de fusion allant jusqu'à 600 °C et l'énergie libre de Gibbs standard ΔGf de formation de l'oxyde pour 1 mol d'O2 étant de 1000 à 500 kJ/mol d'O2, inclus.
(JA) 保磁力Hcの大きい磁性薄膜を作製可能なスパッタリングターゲットを提供する。 金属Co、金属Pt、および酸化物を含有してなるスパッタリングターゲットであって、不可避的な不純物以外に金属Crを含まないスパッタリングターゲットであり、前記酸化物は、融点が600℃以下で、かつ、当該酸化物のO21molあたりの標準生成ギブズ自由エネルギーΔGfが-1000kJ/mol O2 以上-500kJ/mol O2 以下である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
SG11201804080RMYPI 2018701946CN108291294US20180355473