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1. (WO2017090325) METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090325 International Application No.: PCT/JP2016/079664
Publication Date: 01.06.2017 International Filing Date: 05.10.2016
IPC:
C30B 29/06 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
06
Silicon
Applicants:
株式会社SUMCO SUMCO CORPORATION [JP/JP]; 東京都港区芝浦一丁目2番1号 1-2-1, Shibaura, Minato-ku, Tokyo 1058634, JP
Inventors:
金 大基 KIM Tegi; JP
Agent:
特許業務法人樹之下知的財産事務所 KINOSHITA & ASSOCIATES; 東京都杉並区荻窪五丁目26番13号 3階 3rd Floor, 26-13, Ogikubo 5-chome, Suginami-ku, Tokyo 1670051, JP
Priority Data:
2015-23107226.11.2015JP
Title (EN) METHOD FOR PRODUCING SILICON SINGLE CRYSTAL
(FR) PROCÉDÉ DE PRODUCTION D'UN MONOCRISTAL DE SILICIUM
(JA) シリコン単結晶の製造方法
Abstract:
(EN) This method for producing a silicon single crystal includes: a melting step of melting silicon by heating a quartz crucible in which the silicon is contained with a heating unit; a dipping step of bringing a seed crystal into contact with silicon melt in the quartz crucible; and a pulling step of growing a silicon single crystal by pulling the seed crystal. In the pulling step, forming of a straight body part of the silicon single crystal begins after the power consumption of the heating unit reaches 10000 kwh or more to grow the whole silicon single crystal.
(FR) La présente invention concerne un procédé de production d'un monocristal de silicium comprenant : une étape de fusion consistant à faire fondre du silicium par chauffage d'un creuset de quartz dans lequel est contenu le silicium à l'aide d'une unité de chauffage; une étape d'immersion consistant à amener un cristal germe en contact avec le silicium fondu dans le creuset de quartz; et une étape de tirage consistant à faire croître un monocristal de silicium en tirant le germe cristallin. Dans l'étape de tirage, la formation d'une partie de corps droite du monocristal de silicium commence après que la consommation d'énergie de l'unité de chauffage atteint 10 000 kwh ou plus pour faire croître le monocristal de silicium entier.
(JA) シリコン単結晶の製造方法は、シリコンが収容された石英坩堝を加熱部で加熱することで、シリコンを融解する融解工程と、種結晶を石英坩堝内のシリコン融液に接触させるディップ工程と、種結晶を引き上げることで、シリコン単結晶を育成する引き上げ工程とを備え、引き上げ工程は、加熱部の消費電力量が10000kwh以上になってからシリコン単結晶の直胴部の形成を開始して、シリコン単結晶全体を育成する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)
Also published as:
KR1020180072777DE112016005411CN108291328US20180355508