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1. (WO2017090281) MODULE SUBSTRATE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/2017/090281 International Application No.: PCT/JP2016/072998
Publication Date: 01.06.2017 International Filing Date: 04.08.2016
IPC:
H01L 25/07 (2006.01) ,H01L 23/12 (2006.01) ,H01L 23/36 (2006.01) ,H01L 25/18 (2006.01) ,H02M 7/48 (2007.01) ,H05K 1/03 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
03
all the devices being of a type provided for in the same subgroup of groups H01L27/-H01L51/128
04
the devices not having separate containers
07
the devices being of a type provided for in group H01L29/78
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
12
Mountings, e.g. non-detachable insulating substrates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
34
Arrangements for cooling, heating, ventilating or temperature compensation
36
Selection of materials, or shaping, to facilitate cooling or heating, e.g. heat sinks
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
25
Assemblies consisting of a plurality of individual semiconductor or other solid state devices
18
the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/-H01L51/160
H ELECTRICITY
02
GENERATION, CONVERSION, OR DISTRIBUTION OF ELECTRIC POWER
M
APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
7
Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
42
Conversion of dc power input into ac power output without possibility of reversal
44
by static converters
48
using discharge tubes with control electrode or semiconductor devices with control electrode
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
K
PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
1
Printed circuits
02
Details
03
Use of materials for the substrate
Applicants:
シャープ株式会社 SHARP KABUSHIKI KAISHA [JP/JP]; 大阪府堺市堺区匠町1番地 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522, JP
Inventors:
佐藤 知稔 SATOH, Tomotoshi; --
田中 研一 TANAKA, Kenichi; --
佐藤 浩哉 SATO, Hiroya; --
若生 周治 WAKAIKI, Shuji; --
Agent:
特許業務法人HARAKENZO WORLD PATENT & TRADEMARK HARAKENZO WORLD PATENT & TRADEMARK; 大阪府大阪市北区天神橋2丁目北2番6号 大和南森町ビル Daiwa Minamimorimachi Building, 2-6, Tenjinbashi 2-chome Kita, Kita-ku, Osaka-shi, Osaka 5300041, JP
Priority Data:
2015-23010925.11.2015JP
Title (EN) MODULE SUBSTRATE
(FR) SUBSTRAT DE MODULE
(JA) モジュール基板
Abstract:
(EN) A module substrate (100) is provided with: an insulating layer (10) that is made of non-magnetic material and that has a first surface (10a) and a second surface (10b); at least one half bridge circuit (1) that is formed on the first surface (10a) and includes conductor wiring parts (11, 12, 13); a conductor wiring part (21) that is formed on the second surface (10b) and is wider than any of the conductor wiring parts (11, 12, 13); one electrode part (32) connected to both one end of the half bridge circuit (1) and one end of the conductor wiring part (21); and another electrode part (34) that is separated from the other end of the half bridge circuit (1) but is connected to the other end of the conductor wiring part (21). When the relative dielectric constant of the material of the insulating layer (10) is defined as ε and the thickness of the insulating layer (10) is defined as T, 6.01 × ε1.40 µm ≤ T ≤ 500 µm is satisfied.
(FR) L'invention porte sur un substrat de module (100) qui comprend : une couche isolante (10) qui est constituée d'un matériau non magnétique et présente une première surface (10a) et une seconde surface (10b) ; au moins un circuit en demi-pont (1) qui est formé sur la première surface (10a) et comprend des parties câblage conducteur (11, 12, 13) ; une partie câblage conducteur (21) qui est formée sur la seconde surface (10b) et est plus large que n'importe laquelle des parties câblage conducteur (11, 12, 13) ; une partie électrode (32) connectée à une extrémité du circuit en demi-pont (1) et à une extrémité de la partie câblage conducteur (21) ; et une autre partie électrode (34) qui est séparée de l'autre extrémité du circuit en demi-pont (1) mais est connectée à l'autre extrémité de la partie câblage conducteur (21). Quand la constante diélectrique du matériau de la couche isolante (10) est notée ε et l'épaisseur de la couche isolante (10) est notée T, la relation 6,01 × ε1,40 µm ≤ T ≤ 500 µm est satisfaite.
(JA) モジュール基板(100)は、第1の面(10a)および第2の面(10b)を有し、かつ非磁性材料からなる絶縁層(10)と、第1の面(10a)上に形成され、かつ導体配線部(11・12・13)を有する少なくとも1つのハーフブリッジ回路(1)と、第2の面(10b)上に形成され、かつ導体配線部(11・12・13)よりも幅広の導体配線部(21)と、ハーフブリッジ回路(1)の一端および導体配線部(21)の一端の双方に接続される一方の電極部(32)と、ハーフブリッジ回路(1)の他端から分離され、かつ導体配線部(21)の他端に接続される他方の電極部(34)と、を備えており、絶縁層(10)の材料の比誘伝率をεとし、絶縁層(10)の厚さをTとすると、6.01×ε1.40μm≦T≦500μmを満たす。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)