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1. WO2017082541 - METAL PRECURSOR, MANUFACTURING METHOD THEREFOR, AND METHOD FOR FORMING THIN FILM BY USING SAME

Publication Number WO/2017/082541
Publication Date 18.05.2017
International Application No. PCT/KR2016/011359
International Filing Date 11.10.2016
IPC
C07F 7/22 2006.1
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7Compounds containing elements of Groups 4 or 14 of the Periodic System
22Tin compounds
C23C 16/06 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
06characterised by the deposition of metallic material
C23C 16/455 2006.1
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
455characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H01L 21/205 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
C07F 5/00 2006.1
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
5Compounds containing elements of Groups 3 or 13 of the Periodic System
CPC
C07C 259/06
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
CACYCLIC OR CARBOCYCLIC COMPOUNDS
259Compounds containing carboxyl groups, an oxygen atom of a carboxyl group being replaced by a nitrogen atom, this nitrogen atom being further bound to an oxygen atom and not being part of nitro or nitroso groups
04without replacement of the other oxygen atom of the carboxyl group, e.g. hydroxamic acids
06having carbon atoms of hydroxamic groups bound to hydrogen atoms or to acyclic carbon atoms
C07F 5/00
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
5Compounds containing elements of Groups 3 or 13 of the Periodic System
C07F 7/2224
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
7Compounds containing elements of Groups 4 or 14 of the Periodic System
22Tin compounds
2224Compounds having one or more tin-oxygen linkages
C23C 16/18
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
06characterised by the deposition of metallic material
18from metallo-organic compounds
C23C 16/407
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
407of zinc, germanium, cadmium, indium, tin, thallium or bismuth
C23C 16/45525
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45523Pulsed gas flow or change of composition over time
45525Atomic layer deposition [ALD]
Applicants
  • 한국화학연구원 KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY [KR]/[KR]
Inventors
  • 박보근 PARK, Bo Keun
  • 정택모 CHUNG, Taek-Mo
  • 전동주 JEON, Dong Ju
  • 한정환 HAN, Jeong Hwan
  • 남지현 NAM, Ji Hyeun
  • 김창균 KIM, Chang Gyoun
  • 정은애 JUNG, Eun Ae
Agents
  • 특허법인 플러스 PLUS INTERNATIONAL IP LAW FIRM
Priority Data
10-2015-015822411.11.2015KR
10-2015-015823711.11.2015KR
Publication Language Korean (ko)
Filing Language Korean (KO)
Designated States
Title
(EN) METAL PRECURSOR, MANUFACTURING METHOD THEREFOR, AND METHOD FOR FORMING THIN FILM BY USING SAME
(FR) PRÉCURSEUR DE MÉTAL, PROCÉDÉ DE PRÉPARATION ASSOCIÉ, ET PROCÉDÉ DE FORMATION DE FILM MINCE AU MOYEN DE CELUI-CI
(KO) 금속 전구체, 이의 제조방법, 및 이를 이용하여 박막을 형성하는 방법
Abstract
(EN) The present invention relates to a novel metal precursor having improved thermal stability and volatility and can provide: a method for readily manufacturing a good quality metal oxide thin film at an excellent growth rate at low temperature by using the metal precursor; and a thin film manufactured by using the same.
(FR) La présente invention concerne un nouveau précurseur de métal ayant une meilleure stabilité thermique et une meilleure volatilité, qui peut fournir : un procédé permettant de fabriquer facilement un film mince d'oxyde de métal de bonne qualité à une excellente vitesse de croissance à basse température en utilisant le précurseur de métal; et un film mince fabriqué en l'utilisant.
(KO) 본 발명은 열적 안정성과 휘발성이 개선된 신규한 금속 전구체에 관한 것으로, 상기 금속 전구체를 이용하여 낮은 온도에서 우수한 성장 속도로, 쉽게 양질의 금속 산화물 박막을 제조하는 방법 및 이를 통해 제조된 박막을 제공할 수 있다.
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