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1. WO2017076116 - LED EPITAXIAL STRUCTURE AND MANUFACTURING METHOD

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Publication Number WO/2017/076116
Publication Date 11.05.2017
International Application No. PCT/CN2016/097802
International Filing Date 01.09.2016
IPC
H01L 33/14 2010.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
CPC
H01L 33/007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
005Processes
0062for devices with an active region comprising only III-V compounds
0066with a substrate not being a III-V compound
007comprising nitride compounds
H01L 33/06
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
04with a quantum effect structure or superlattice, e.g. tunnel junction
06within the light emitting region, e.g. quantum confinement structure or tunnel barrier
H01L 33/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
12with a stress relaxation structure, e.g. buffer layer
H01L 33/14
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
14with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
H01L 33/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
24of the light emitting region, e.g. non-planar junction
H01L 33/32
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
26Materials of the light emitting region
30containing only elements of group III and group V of the periodic system
32containing nitrogen
Applicants
  • 厦门市三安光电科技有限公司 XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. [CN]/[CN]
Inventors
  • 张洁 ZHANG, Jie
  • 朱学亮 ZHU, Xueliang
  • 杜成孝 DU, Chengxiao
  • 刘建明 LIU, Jianming
  • 徐宸科 HSU, Chen-ke
Priority Data
201510729267.902.11.2015CN
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) LED EPITAXIAL STRUCTURE AND MANUFACTURING METHOD
(FR) STRUCTURE ÉPITAXIALE DE DEL ET PROCÉDÉ DE FABRICATION
(ZH) 一种LED外延结构及制作方法
front page image
Abstract
(EN) An LED epitaxial structure and a manufacturing method, comprising in an ascending sequence: a substrate (1), first electrically-conductive-type semiconductor layers (3 and 4), a superlattice (5), a multi-quantum well layer (6) having V-shaped pits, a hole injection layer (8), and second electrically-conductive-type semiconductor layers (9 and 10). The hole injection layer (8) is double-hexagonal cones filling the V-shaped pits and embedded into the second electrically-conductive-type semiconductor layers (9 and 10).
(FR) L'invention concerne une structure épitaxiale de DEL et un procédé de fabrication, comprenant dans une séquence ascendante : un substrat (1), des premières couches semi-conductrices de type électroconductrices (3 et 4), un super-réseau (5), une couche à puits quantiques multiples (6) ayant des creux en forme de V, une couche d'injection de trous (8) et des secondes couches semiconductrices de type électroconductrices (9 et 10). La couche d'injection de trous (8) se présente sous la forme de cônes hexagonaux doubles remplissant les creux en forme de V et incorporés dans les secondes couches semi-conductrices de type électroconductrices (9 et 10).
(ZH) 一种LED外延结构及制作方法，从下至上依次包括：衬底（1）、第一导电类型半导体层（3，4）、超晶格（5）、具有V型坑的多量子阱层（6）、空穴注入层（8）以及第二导电类型半导体层（9，10），所述空穴注入层（8）呈双六角锥，填满所述V型坑并嵌入第二导电类型半导体层（9，10）。
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