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1. WO2017071661 - THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY PANEL

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Publication Number WO/2017/071661
Publication Date 04.05.2017
International Application No. PCT/CN2016/103835
International Filing Date 28.10.2016
IPC
H01L 29/786 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/336 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
CPC
H01L 2021/775
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
775comprising a plurality of TFTs on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
H01L 21/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
H01L 21/702
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
702of thick-or thin-film circuits or parts thereof
H01L 21/707
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
702of thick-or thin-film circuits or parts thereof
707of thin-film circuits or parts thereof
H01L 21/77
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H01L 21/82
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
Applicants
  • 陆磊 LU, Lei [CN]/[CN]
  • 王文 WONG, Man [CN]/[CN]
  • 郭海成 KWOK, HoiSing [CN]/[CN]
Inventors
  • 陆磊 LU, Lei
  • 王文 WONG, Man
  • 郭海成 KWOK, HoiSing
Agents
  • 深圳青年人专利商标代理有限公司 SHENZHEN YOUTH PATENT AND TRADEMARK AGENCY LTD.
Priority Data
62/285,43629.10.2015US
Publication Language Chinese (zh)
Filing Language Chinese (ZH)
Designated States
Title
(EN) THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR, AND DISPLAY PANEL
(FR) TRANSISTOR À COUCHE MINCE, SON PROCÉDÉ DE FABRICATION, ET PANNEAU D’AFFICHAGE
(ZH) 一种薄膜晶体管及制造方法和显示器面板
front page image
Abstract
(EN) A thin film transistor comprises: a substrate (1), an active layer (2), composed of metal oxides, arranged on the substrate (1); the active layer (2) is adjacent to a grid laminate (3); a partial region of the active layer (2) is covered with an electrode (4); a first insulating layer (6) is further arranged between the electrode (4) and the active layer (2); the electrode (4) is covered with a second insulating layer (7); source regions (21) and (23) are respectively formed in the region, covered by the second insulating layer (7), of the active layer (2); and a channel region (22) is formed in a region not covered by the second insulating layer (7). The present invention also relates to a manufacturing method of the thin film transistor and a display panel having the thin film transistor. The thin film transistor has the small size as a transitional transistor having a back channel etched structure, and has better performance compared to a transitional transistor having an etched barrier structure in aspects such as low source/drain parasitic resistance, better on-state and off-state performance and enhanced reliability. The display panel having the thin film transistor has high performance, high reliability, low cost and comply with the development trend of display panels.
(FR) L’invention concerne un transistor à couche mince qui comprend : un substrat (1), une couche active (2), composée d’oxydes de métal, agencée sur le substrat (1) ; la couche active (2) est adjacente à un stratifié de grille (3) ; une zone partielle de la couche active (2) est recouverte d’une électrode (4) ; une première couche isolante (6) est en outre agencée entre l’électrode (4) et la couche active (2) ; l’électrode (4) est recouverte d’une deuxième couche isolante (7) ; des zones de source (21) et (23) sont respectivement formées dans la zone, recouverte par la deuxième couche isolante (7), de la couche active (2) ; et une zone de canal (22) est formée dans une zone non recouverte par la deuxième couche isolante (7). La présente invention porte également sur un procédé de fabrication du transistor à couche mince et sur un panneau d’affichage comportant le transistor à couche mince. Le transistor à couche mince présente la petite taille d’un transistor transitoire comportant une structure gravée de canal arrière, et présente une meilleure performance qu’un transistor transitoire comportant une structure de barrière gravée dans des aspects tels qu’une faible résistance parasite de source/drain, une meilleure performance d’état actif et d’état inactif et une fiabilité renforcée. Le panneau d’affichage comportant le transistor à couche mince présente une performance élevée, une fiabilité élevée, un faible coût et est conforme à la tendance de développement de panneaux d’affichage.
(ZH) 一种薄膜晶体管，包括衬底（1）和设置在所述衬底（1）上的由金属氧化物构成的有源层（2），所述有源层（2）与栅极叠层（3）相毗邻；所述有源层（2）部分区域上覆盖有电极（4）；所述电极（4）与所述有源层（2）之间还包括第一绝缘层（6）；所述电极（4）上覆盖有第二绝缘层（7）；所述有源层（2）在所述第二绝缘层（7）覆盖下的区域分别形成源区（21）和（23），在非所述第二绝缘层（7）覆盖下的区域形成沟道区（22）。还涉及薄膜晶体管制造方法和具有上述薄膜晶体管的显示器面板。上述薄膜晶体管既具有传统背沟道刻蚀结构晶体管的小尺寸，又具有比传统刻蚀阻挡层结构晶体管更优越的性能，包括低的源漏寄生电阻、更好的开态和关态性能、增强的可靠性。具有上述薄膜晶体管的显示器面板兼具高性能、高可靠性、低成本等优点，更符合显示器面板的发展趋势。
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