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1. (WO2017070446) ISOLATED COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) DEVICES FOR RADIO-FREQUENCY (RF) CIRCUITS

Pub. No.:    WO/2017/070446    International Application No.:    PCT/US2016/058072
Publication Date: Fri Apr 28 01:59:59 CEST 2017 International Filing Date: Sat Oct 22 01:59:59 CEST 2016
IPC: H01L 21/8234
H01L 21/768
H01L 21/762
H01L 21/78
Applicants: QUALCOMM INCORPORATED
Inventors: KIM, Daeik, Daniel
YUN, Changhan, Hobie
LAN, Je-Hsiung, Jeffrey
MUDAKATTE, Niranjan, Sunil
KIM, Jonghae
NOWAK, Matthew, Michael
Title: ISOLATED COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR (CMOS) DEVICES FOR RADIO-FREQUENCY (RF) CIRCUITS
Abstract:
Isolated complementary metal-oxide semiconductor (CMOS) devices for radiofrequency (RF) circuits are disclosed. In some aspects, an RF circuit comprises CMOS devices, a silicon substrate (522) having doped regions that define the CMOS devices, and a trench (524) through the silicon substrate. The trench through the silicon substrate forms a continuous channel around the doped regions of one of the CMOS devices to electrically isolate the CMOS device from other CMOS devices embodied on the silicon substrate. By so doing, performance characteristics of the CMOS device, such as linearity and signal isolation, may be improved over those of conventional CMOS devices (e.g., bulk CMOS).