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1. (WO2017070051) TRENCH MOSFET WITH SELF-ALIGNED BODY CONTACT WITH SPACER
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/070051 International Application No.: PCT/US2016/057368
Publication Date: 27.04.2017 International Filing Date: 17.10.2016
IPC:
H01L 29/423 (2006.01) ,H01L 29/66 (2006.01) ,H01L 29/43 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
41
characterised by their shape, relative sizes or dispositions
423
not carrying the current to be rectified, amplified or switched
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40
Electrodes
43
characterised by the materials of which they are formed
Applicants: VISHAY-SILICONIX[US/US]; 2201 Laurelwood Road Santa Clara, CA 95054, US
Inventors: GUAN, Lingpeng; US
TERRILL, Kyle; US
JO, Seokjin; US
Agent: MURABITO, Anthony, C.; US
Priority Data:
15/263,88213.09.2016US
62/243,50219.10.2015US
Title (EN) TRENCH MOSFET WITH SELF-ALIGNED BODY CONTACT WITH SPACER
(FR) MOSFET À TRANCHÉE AVEC CONTACT CORPOREL AUTOALIGNÉ AVEC ÉLÉMENT D'ESPACEMENT
Abstract:
(EN) Trench MOSFET with self- aligned body contact with spacer. In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor substrate, and at least two gate trenches formed in the semiconductor substrate. Each of the trenches comprises a gate electrode. The semiconductor device also includes a body contact trench formed in the semiconductor substrate between the gate trenches. The body contact trench has a lower width at the bottom of the body contact trench and an ohmic body contact implant beneath the body contact trench. The horizontal extent of the ohmic body contact implant is at least the lower width of the body contact trench.
(FR) La présente invention concerne un MOSFET à tranchée avec contact corporel auto-aligné avec élément d'espacement. Selon un mode de réalisation de la présente invention, un dispositif à semi-conducteur comprend un substrat semi-conducteur, et au moins deux tranchées de grille formées dans le substrat semi-conducteur. Chacune des tranchées comprend une électrode grille. Le dispositif à semi-conducteur comprend également une tranchée de contact corporel formée dans le substrat semi-conducteur entre les tranchées de grille. La tranchée de contact corporel présente une largeur inférieure au niveau fond de la tranchée de contact corporel et un implant de contact corporel ohmique en dessous de la tranchée de contact corporel. L'étendue horizontale de l'implant de contact corporel ohmique est au moins la largeur inférieure de la tranchée de contact corporel.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)