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1. (WO2017069869) WORD LINE DEPENDENT CHANNEL PRE-CHARGE FOR MEMORY

Pub. No.:    WO/2017/069869    International Application No.:    PCT/US2016/051362
Publication Date: Fri Apr 28 01:59:59 CEST 2017 International Filing Date: Tue Sep 13 01:59:59 CEST 2016
IPC: G11C 16/34
G11C 16/10
Applicants: SANDISK TECHNOLOGIES LLC
Inventors: PANG, Liang
YUAN, Jiahui
DONG, Yingda
Title: WORD LINE DEPENDENT CHANNEL PRE-CHARGE FOR MEMORY
Abstract:
Techniques are provided for programming a memory device. A pre-charge phase is used to boost the channel of an unselected NAND string by allowing a bit line voltage to reach the channel. To maximize the channel pre-charge while also minimizing program disturb, a drain-side dummy word line voltage is controlled based on the position of the selected word line. The drain-side dummy word line voltage can be relatively high or low when the selected word line is relatively far from or close to the drain-side dummy word line, respectively. When the drain-side dummy word line voltage is relatively high, the bit line voltage can easily pass through and boost the channel. When the drain-side dummy word line voltage is relatively low, program disturb of drain-side data word lines is reduced due to a smaller channel gradient and a corresponding reduced amount of hot carriers.