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1. (WO2017069372) LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/069372 International Application No.: PCT/KR2016/006428
Publication Date: 27.04.2017 International Filing Date: 17.06.2016
IPC:
H01L 33/46 (2010.01) ,H01L 33/50 (2010.01) ,H01L 33/58 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
46
Reflective coating, e.g. dielectric Bragg reflector
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
50
Wavelength conversion elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
Applicants: SEOUL VIOSYS CO., LTD.[KR/KR]; 65-16, Sandan-ro 163beon-gil, Danwon-gu, Ansan-si, Gyeonggi-do 15429, KR
Inventors: KIM, Ye Seul; KR
WOO, Sang Won; KR
KIM, Kyoung Wan; KR
Agent: AIP PATENT & LAW FIRM; 30-1, Teheran-ro 14-gil, Gangnam-gu Seoul 06239, KR
Priority Data:
10-2015-014803623.10.2015KR
Title (EN) LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR
(FR) PUCE DE DIODE ÉLECTROLUMINESCENTE COMPORTANT UN RÉFLECTEUR DE BRAGG RÉPARTI
Abstract:
(EN) A DBR is disposed at one side of a light emitting structure. The DBR includes first material layers having a high index of refraction and second material layers having a low index of refraction, the first and second material layers alternately stacked one above another. With respect to a central wavelength λ, the DBR includes: a first region in which a first group of first material layers having an optical thickness greater than 0.25λ+10% and a second group of first material layers having an optical thickness greater than 0.25λ-10% and less than 0.25λ+10% are alternately arranged; a second region including a third group of first material layers having an optical thickness less than 0.25λ-10% and consecutively arranged; and a third region disposed between the first region and the second region and including a first material layer having an optical thickness less than 0.25λ-10% and a first material layer having an optical thickness greater than 0.25λ.
(FR) Un réflecteur de Bragg réparti (DBR) est disposé sur un côté d'une structure électroluminescente. Le DBR comprend des premières couches de matériau ayant un indice de réfraction élevé et des secondes couches de matériau ayant un faible indice de réfraction, les premières et secondes couches de matériau étant empilées en alternance les unes au-dessus des autres. Par rapport à une longueur d'onde centrale λ, le DBR comprend : une première région dans laquelle un premier groupe de premières couches de matériau ayant une épaisseur optique supérieure à 0,25λ + 10 % et un deuxième groupe de premières couches de matériau ayant une épaisseur optique supérieure à 0,25λ - 10 % et inférieure à 0,25λ + 10 % sont disposés en alternance ; une deuxième région comprenant un troisième groupe de premières couches de matériau ayant une épaisseur optique inférieure à 0,25λ - 10 % et agencée consécutivement ; et une troisième région disposée entre la première région et la deuxième région et comportant une première couche de matériau ayant une épaisseur optique inférieure à 0,25λ - 10 % et une première couche de matériau ayant une épaisseur optique supérieure à 0,25λ.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)