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1. (WO2017069022) OXIDE SEMICONDUCTOR
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Pub. No.: WO/2017/069022 International Application No.: PCT/JP2016/080205
Publication Date: 27.04.2017 International Filing Date: 12.10.2016
IPC:
C01G 33/00 (2006.01) ,C04B 35/457 (2006.01) ,C04B 35/495 (2006.01) ,H01L 21/363 (2006.01) ,H01L 21/368 (2006.01) ,H01L 29/24 (2006.01) ,H01L 29/786 (2006.01)
C CHEMISTRY; METALLURGY
01
INORGANIC CHEMISTRY
G
COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
33
Compounds of niobium
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
453
based on zinc, tin or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
457
based on tin oxides or stannates
C CHEMISTRY; METALLURGY
04
CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
B
LIME; MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
35
Shaped ceramic products characterised by their composition; Ceramic compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
01
based on oxides
495
based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
363
using physical deposition, e.g. vacuum deposition, sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
34
the devices having semiconductor bodies not provided for in groups H01L21/06, H01L21/16, and H01L21/18159
36
Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
368
using liquid deposition
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
12
characterised by the materials of which they are formed
24
including, apart from doping materials or other impurities, only inorganic semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20 or H01L29/22246
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
786
Thin-film transistors
Applicants:
国立研究開発法人産業技術総合研究所 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY [JP/JP]; 東京都千代田区霞が関1丁目3番1号 3-1, Kasumigaseki 1-chome, Chiyoda-ku, Tokyo 1008921, JP
Inventors:
菊地 直人 KIKUCHI Naoto; JP
外岡 和彦 TONOOKA Kazuhiko; JP
相浦 義弘 AIURA Yoshihiro; JP
川中 浩史 KAWANAKA Hirofumi; JP
王 瑞平 WANG Ruiping; JP
高島 浩 TAKASHIMA Hiroshi; JP
三溝 朱音 SAMIZO Akane; JP
池田 紳太郎 IKEDA Shintarou; JP
Priority Data:
2015-20635120.10.2015JP
Title (EN) OXIDE SEMICONDUCTOR
(FR) SEMI-CONDUCTEUR OXYDE
(JA) 酸化物半導体
Abstract:
(EN) Provided is an oxide semiconductor wherein a p-type semiconductor can be realized, and the oxide semiconductor has excellent transparency, mobility, and weather resistance. By the present invention, an oxide semiconductor is realized by an oxide composite having a pyrochlore structure including Sn and Nb, the Sn/Nb compositional ratio satisfying the expression 0.81 ≤ Sn/Nb < 1.0. The oxide semiconductor has a wide gap of 2.2 eV, and is therefore a p-type semiconductor having transparency in the visible light region and high mobility. When the amount of Sn is small with respect to the stoichiometric composition of the compositional formula Sn2Nb2O7, i.e., Sn/Nb < 1, a p-type can be realized by generation of a structural defect V’’Sn, and a pyrochlore structure is obtained when the compositional ratio Sn/Nb is at least 0.81.
(FR) L'invention concerne un semi-conducteur oxyde, un semi-conducteur de type p pouvant être réalisé et le semi-conducteur oxyde présentant une excellente transparence, une excellente mobilité et une excellente résistance aux agents atmosphériques. La présente invention permet de réaliser un semi-conducteur oxyde grâce à un composite oxyde présentant une structure de pyrochlore comprenant Sn et Nb, le rapport Sn/Nb de la composition satisfaisant à l'expression 0,81 ≤ Sn/Nb < 1,0. Le semi-conducteur oxyde présente une bande interdite large de 2,2 eV et est dès lors un semi-conducteur de type p présentant une transparence dans la région de la lumière visible et une mobilité élevée. Lorsque la quantité de Sn est faible par rapport à la composition stoechiométrique de la formule de composition Sn2Nb2O7, c'est-à-dire Sn/Nb < 1, un type p peut être réalisé par la génération d'un défaut structural V''Sn et une structure de pyrochlore est obtenue lorsque le rapport de composition Sn/Nb est d'au moins 0,81.
(JA) 酸化物半導体においてp型半導体を実現可能にし、透明性、移動度、耐候性の優れた酸化物半導体を提供する。 Sn及びNbを含むパイロクロア構造を有し、組成比Sn/Nbが0.81≦Sn/Nb<1.0である酸化物複合体により、酸化物半導体を実現した。該酸化物半導体は、2.2eVというワイドギャップを有するため可視光領域で透明性を有し、かつ高移動度のp型半導体である。Snが組成式SnNbの量論組成に対して少ないとき、即ちSn/Nb<1のときに、構造欠陥V''Snの生成により、p型を実現でき、組成比Sn/Nbが0.81以上のとき、パイロクロア構造をとる。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)