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1. (WO2017064948) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Pub. No.:    WO/2017/064948    International Application No.:    PCT/JP2016/076418
Publication Date: Fri Apr 21 01:59:59 CEST 2017 International Filing Date: Fri Sep 09 01:59:59 CEST 2016
IPC: H01L 29/78
H01L 21/336
H01L 29/06
H01L 29/12
Applicants: FUJI ELECTRIC CO., LTD.
富士電機株式会社
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
国立研究開発法人産業技術総合研究所
Inventors: IWAYA, Masanobu
岩谷 将伸
KINOSHITA, Akimasa
木下 明将
HARADA, Shinsuke
原田 信介
TANAKA, Yasunori
田中 保宣
Title: SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
According to the present invention, a trench (16) is formed in a first main surface of a silicon carbide semiconductor base; an n-type silicon carbide epitaxial layer (2) is deposited on the first main surface of the silicon carbide semiconductor base; and an n-type high-concentration region (5) is formed in the surface of the n-type silicon carbide epitaxial layer. In addition, the surface of the n-type silicon carbide epitaxial layer (2) is selectively provided with a first p-type base region (3) and a second p+-type base region (4); and the second p+-type base region (4) is formed in the bottom of the trench (16). The depth of the n-type high-concentration region (5) is deeper than the depths of the first p-type base region (3) and the second p+-type base region (4). Consequently, the electric field intensity of a gate insulating film at the trench bottom is relaxed by a simple method, so that the on-resistance is able to be reduced, while ensuring the withstand voltage in an active part.