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1. (WO2017063917) METHOD FOR PRODUCING AN ELECTRONIC ASSEMBLY, AND ELECTRONIC ASSEMBLY
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/063917 International Application No.: PCT/EP2016/073686
Publication Date: 20.04.2017 International Filing Date: 04.10.2016
IPC:
H01L 21/00 (2006.01) ,H01L 23/31 (2006.01) ,H01L 23/498 (2006.01) ,H01L 31/00 (2006.01) ,H01L 31/02 (2006.01) ,H01L 31/0203 (2014.01) ,H01L 31/048 (2014.01) ,H01L 33/00 (2010.01) ,H01L 33/48 (2010.01) ,H01L 33/62 (2010.01) ,H01L 51/00 (2006.01) ,H01L 51/10 (2006.01) ,H01L 51/44 (2006.01) ,H01L 51/52 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
28
Encapsulation, e.g. encapsulating layers, coatings
31
characterised by the arrangement
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23
Details of semiconductor or other solid state devices
48
Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
488
consisting of soldered or bonded constructions
498
Leads on insulating substrates
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0203
Containers; Encapsulations
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
042
including a panel or array of photoelectric cells, e.g. solar cells
048
encapsulated or with housing
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
05
specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier
10
Details of devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
42
specially adapted for sensing infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation; specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
44
Details of devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
51
Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
50
specially adapted for light emission, e.g. organic light emitting diodes (OLED) or polymer light emitting devices (PLED)
52
Details of devices
Applicants: OSRAM GMBH[DE/DE]; Marcel-Breuer-Straße 6 80807 München, DE
Inventors: HOXHOLD, Bjoern; DE
SCHLOSSER, Philipp; DE
BECKER, Dirk; DE
WALDSCHIK, Andreas; DE
Priority Data:
10 2015 219 824.313.10.2015DE
Title (EN) METHOD FOR PRODUCING AN ELECTRONIC ASSEMBLY, AND ELECTRONIC ASSEMBLY
(FR) PROCÉDÉ DE FABRICATION D’UN MODULE ÉLECTRONIQUE ET MODULE ÉLECTRONIQUE
(DE) VERFAHREN ZUM HERSTELLEN EINER ELEKTRONISCHEN BAUGRUPPE UND ELEKTRONISCHE BAUGRUPPE
Abstract:
(EN) Various exemplary embodiments of a method for producing an electronic assembly are provided. In the method, an electronic component (62) is embedded in a housing material (40). A buffer layer (60) is formed on the housing material (40). A metal layer (44) for making contact with the electronic component (62) is formed on a side of the buffer layer (60) which is averted from the housing material (40). A recess (50) for making contact with the metal layer (44) is formed by the housing material (40) being removed from a prespecified region (46) by means of a first laser (48) with a first energy such that the buffer layer (60) is exposed in the prespecified region (46), and by the buffer layer (60) being removed from the exposed region by means of a second laser (58) with a second energy, which is lower than the first energy, such that the metal layer (44) therein is exposed.
(FR) Selon divers modes de réalisation, l’invention concerne un procédé de fabrication d’un module électronique. Dans le procédé, un composant électronique (62) est noyé dans un matériau d’enveloppe (40). Une couche tampon (60) est formée sur le matériau d’enveloppe (40). Une couche métallique (44) destinée la mise en contact du composant électronique (62) est formée du côté de la couche tampon (60) qui est opposé au matériau d’enveloppe (40). Un évidement (50) destiné à la mise en contact de la couche métallique (44) est formé par élimination du matériau d’enveloppe (40) dans une zone prédéterminée (46) au moyen d’un premier laser (48) d’une première puissance de façon à exposer la couche tampon (60) dans la zone prédéterminée (46) et par élimination de la couche tampon (60) dans la zone exposée au moyen d’un second laser (58) d’une seconde puissance, inférieure à la première puissance, de façon à exposer la couche métallique (44).
(DE) In verschiedenen Ausführungsbeispielen wird ein Verfahren zum Herstellen einer elektronischen Baugruppe bereitgestellt. Bei dem Verfahren wird ein elektronisches Bauelement (62) in ein Gehäusematerial (40) eingebettet. Eine Pufferschicht (60) wird auf dem Gehäusematerial (40) ausgebildet. Eine Metallschicht (44) zum Kontaktieren des elektronischen Bauelements (62) wird auf einer von dem Gehäusematerial (40) abgewandten Seite der Pufferschicht (60) ausgebildet. Eine Ausnehmung (50) zum Kontaktieren der Metallschicht (44) wird ausgebildet, indem mittels eines ersten Lasers (48) bei einer ersten Energie das Gehäusematerial (40) in einem vorgegebenen Bereich (46) so entfernt wird, dass in dem vorgegebenen Bereich (46) die Pufferschicht (60) freigelegt ist, und indem mittels eines zweiten Lasers (58) bei einer zweiten Energie, die kleiner ist als die erste Energie, die Pufferschicht (60) in dem freigelegten Bereich so entfernt wird, dass die Metallschicht (44) darin freigelegt ist.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: German (DE)
Filing Language: German (DE)