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1. (WO2017063292) METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE AND THIN-FILM TRANSISTOR SUBSTRATE MANUFACTURED THEREBY
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/063292 International Application No.: PCT/CN2015/099273
Publication Date: 20.04.2017 International Filing Date: 28.12.2015
IPC:
H01L 21/77 (2017.01) ,H01L 27/12 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
12
the substrate being other than a semiconductor body, e.g. an insulating body
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.[CN/CN]; NO.9-2, Tangming Road, Guangming District of Shenzhen, Guangdong 518132, CN
Inventors: LIU, Yang; CN
Agent: COMIPS INTELLECTUAL PROPERTY OFFICE; Room 15E Shenkan Building, No.1043 Shangbu Zhong Road Shenzhen, Guangdong 518028, CN
Priority Data:
201510659395.013.10.2015CN
Title (EN) METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR SUBSTRATE AND THIN-FILM TRANSISTOR SUBSTRATE MANUFACTURED THEREBY
(FR) PROCÉDÉ DE FABRICATION DE SUBSTRAT DE TRANSISTOR À COUCHES MINCES ET SUBSTRAT DE TRANSISTOR À COUCHES MINCES AINSI FABRIQUÉ
(ZH) 薄膜晶体管基板的制作方法及制得的薄膜晶体管基板
Abstract:
(EN) Provided are a method for manufacturing a thin-film transistor substrate and a thin-film transistor substrate manufactured thereby. The method for manufacturing a thin-film transistor substrate relates to oxidizing a metallic layer directly by means of anodic oxidation using a photoresist pattern as a mask and using the metallic layer as a gate insulating layer (3) or a passivation layer (6), and forming a gate electrode (2) pattern or source and drain electrode (51, 53) patterns. The whole manufacturing process is performed at room temperature, thus allows manufacturing on flexible substrates which cannot withstand a high temperature and is applicable to flexible display technology. The manufacturing process does not require high-temperature resistant flexible substrates or expensive apparatuses for high-temperature processes such as chemical vapor deposition, thereby greatly reducing process costs in manufacturing of flexible displays. The manufactured thin-film transistor substrate has good electrical properties and is suitable for flexible displays.
(FR) L'invention concerne un procédé de fabrication d'un substrat de transistor à couches minces, et un substrat de transistor à couches minces ainsi fabriqué. Le procédé de fabrication d'un substrat de transistor à couches minces consiste à oxyder une couche métallique directement au moyen d'une oxydation anodique en utilisant un motif de résine photosensible comme masque et en utilisant la couche métallique comme couche d'isolation de grille (3) ou comme couche de passivation (6), et à former un motif d'électrode de grille (2) ou des motifs d'électrodes de source et de drain (51, 53). L'ensemble du processus de fabrication est effectué à température ambiante, ce qui permet une fabrication sur des substrats souples qui ne peuvent pas supporter une température élevée, et est applicable à la technologie des écrans souples. Le procédé de fabrication ne nécessite pas de substrats souples résistant aux températures élevées ni d'appareils coûteux pour des processus à haute température tels que le dépôt chimique en phase vapeur, ce qui permet de réduire fortement les coûts de traitement dans la fabrication d'écrans souples. Le substrat de transistor à couches minces fabriqué présente de bonnes propriétés électriques et est approprié pour des écrans souples.
(ZH) 提供一种薄膜晶体管基板的制作方法及制得的薄膜晶体管基板。薄膜晶体管基板的制作方法,利用光阻图案作为掩膜,将金属层通过阳极氧化技术直接氧化作为栅极绝缘层(3)或钝化层(6),同时形成栅电极(2)或源/漏电极(51,53)图形,整个制作工艺在常温下进行,可在不耐高温的柔性基底上制作,适用于柔性显示技术,不需要耐高温的柔性基板,也不需要使用昂贵的化学气相沉积等高温制程设备,能够大大降低柔性显示器制造的工艺成本。制得的薄膜晶体管基板电学性能优良,适用于柔性显示器。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Chinese (ZH)
Filing Language: Chinese (ZH)