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1. (WO2017062614) METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM

Pub. No.:    WO/2017/062614    International Application No.:    PCT/US2016/055737
Publication Date: Fri Apr 14 01:59:59 CEST 2017 International Filing Date: Fri Oct 07 01:59:59 CEST 2016
IPC: C23C 16/34
C23C 16/455
C23C 16/30
Applicants: VERSUM MATERIALS US, LLC
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM
Inventors: LEI, Xinjian
KIM, Moo-Sung
MALLIKARJUNAN, Anupama
DANGERFIELD, Aaron, Michael
PEÑA, Luis, Fabián
CHABAL, Yves, Jean
Title: METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM
Abstract:
Described herein are methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a nitrogen source and an inert gas into the reactor to react with at least a portion of the chemisorbed layer; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.