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1. (WO2017062119) FLIP-CHIP SMT LEDs WITH VARIABLE NUMBER OF EMITTING SURFACES
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Pub. No.: WO/2017/062119 International Application No.: PCT/US2016/050071
Publication Date: 13.04.2017 International Filing Date: 02.09.2016
IPC:
H01L 33/60 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
60
Reflective elements
Applicants:
LUMILEDS HOLDING B.V. [NL/NL]; The Base, Tower B5 unit 107 Evert van de Beekstraat 1 1118 CL Schiphol, NL
Inventors:
DIANA, Frederic S.; US
FANCSALI, Erno; US
DE SMET, Thierry; US
GUTH, Gregory; US
MARTYNOV, Yourii; US
SHCHEKIN, Oleg B.; US
BHARDWAJ, Jyoti; US
Agent:
KERNER, Dawn C.; US
Priority Data:
62/238,66607.10.2015US
Title (EN) FLIP-CHIP SMT LEDs WITH VARIABLE NUMBER OF EMITTING SURFACES
(FR) DEL CMS EN PUCE RETOURNÉE À NOMBRE VARIABLE DE SURFACES ÉMETTRICES
Abstract:
(EN) A method to make light-emitting diode (LED) units include arranging LEDs in a pattern, forming an optically transparent spacer layer over the LEDs, forming an optically reflective layer over the LEDs, and singulating the LEDs into LED units. The method may further include, after forming the optically transparent spacer layer and before singulating the LEDs, forming a secondary light-emitting layer that conforms to the LEDs, cutting the LEDs to form LED groups having a same arrangement, spacing the LED groups on a support, and forming the optically reflective layer in spaces between the LED groups.
(FR) L'invention concerne un procédé de fabrication d'unités de diodes électroluminescentes (DEL) qui consiste à agencer des DEL selon un motif, à former une couche d'entretoise optiquement transparente au-dessus des DEL, à former une couche optiquement réfléchissante au-dessus des DEL, et à singulariser les DEL en unités de DEL. Le procédé peut en outre consister, après la formation de la couche d'entretoise optiquement transparente et avant la singularisation des DEL, à former une couche électroluminescente secondaire qui s'adapte aux DEL, à découper les DEL pour former des groupes de DEL présentant le même agencement, à espacer les groupes de DEL sur un support, et à former la couche optiquement réfléchissante dans des espaces entre les groupes de DEL.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)