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1. (WO2017061844) SEMICONDUCTOR LIGHT-EMITTING DEVICE
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/061844 International Application No.: PCT/KR2016/011326
Publication Date: 13.04.2017 International Filing Date: 10.10.2016
IPC:
H01L 33/62 (2010.01) ,H01L 33/52 (2010.01) ,H01L 33/36 (2010.01) ,H01L 33/60 (2010.01) ,H01L 33/48 (2010.01) ,H01L 33/58 (2010.01) ,H01L 33/02 (2010.01) ,H01L 33/46 (2010.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
62
Arrangements for conducting electric current to or from the semiconductor body, e.g. leadframe, wire-bond or solder balls
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
52
Encapsulations
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36
characterised by the electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
60
Reflective elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
48
characterised by the semiconductor body packages
58
Optical field-shaping elements
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
characterised by the semiconductor bodies
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33
Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44
characterised by the coatings, e.g. passivation layer or anti-reflective coating
46
Reflective coating, e.g. dielectric Bragg reflector
Applicants:
주식회사 세미콘라이트 SEMICON LIGHT CO.,LTD. [KR/KR]; 경기도 용인시 기흥구 원고매로2번길 49 3층 3F 49, Wongomae-ro 2beon-gil, Giheung-gu Yongin-si Gyeonggi-do 17086, KR
Inventors:
박은현 PARK, Eun Hyun; KR
전수근 JEON, Soo Kun; KR
김경민 KIM, Kyoung Min; KR
정동소 JUNG, Dong So; KR
우경제 WOO, Kyeong Jea; KR
Agent:
안상정 AN, Sang Jeong; KR
Priority Data:
10-2015-014170008.10.2015KR
10-2015-014170408.10.2015KR
10-2015-016171318.11.2015KR
10-2015-016171918.11.2015KR
10-2015-016172118.11.2015KR
10-2015-018030616.12.2015KR
10-2015-018031416.12.2015KR
Title (EN) SEMICONDUCTOR LIGHT-EMITTING DEVICE
(FR) DISPOSITIF ÉLECTROLUMINESCENT À SEMI-CONDUCTEURS
(KO) 반도체 발광소자
Abstract:
(EN) Disclosed is a semiconductor light-emitting device comprising: a body having a bottom part and sidewalls, and comprising a cavity formed by the bottom part and the sidewalls, the bottom part having at least one hole formed therein; a semiconductor light-emitting device chip located at each hole and having a plurality of semiconductor layers for generating light through electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers; and an encapsulant provided at least in the cavity so as to cover the semiconductor light-emitting device chip, wherein the electrode of the semiconductor light-emitting device chip is exposed in the direction toward the lower surface of the bottom part of the body.
(FR) La présente invention porte sur un dispositif électroluminescent à semi-conducteurs comprenant : un corps ayant une partie inférieure et des parois latérales, et comprenant une cavité formée par la partie inférieure et les parois latérales, la partie inférieure ayant au moins un trou formé à l'intérieur de celle-ci ; une puce de dispositif électroluminescent à semi-conducteurs située au niveau de chaque trou et ayant une pluralité de couches semi-conductrices destinées à générer une lumière par recombinaison électron-trou, et une électrode électriquement connectée à la pluralité de couches semi-conductrices ; et un encapsulant disposé au moins dans la cavité de manière à recouvrir la puce de dispositif électroluminescent à semi-conducteurs, l'électrode de la puce de dispositif électroluminescent à semi-conducteurs étant exposée dans la direction vers la surface inférieure de la partie inférieure du corps.
(KO) 본 개시는, 반도체 발광소자에 있어서, 바닥부와 측벽을 구비하며, 바닥부와 측벽에 의해 형성된 캐비티를 포함하는 몸체;로서, 바닥부에 적어도 하나 이상의 홀이 형성된 몸체; 각각의 홀에 위치하는 반도체 발광소자 칩;으로서, 전자와 정공의 재결합에 의해 빛을 생성하는 복수의 반도체층과, 복수의 반도체층에 전기적으로 연결된 전극을 구비하는 반도체 발광소자 칩; 그리고, 적어도 캐비티에 구비되어 반도체 발광소자 칩을 덮는 봉지재;를 포함하며, 반도체 발광소자 칩의 전극이 몸체 바닥부의 하면 방향으로 노출되어 있는 것을 특징으로 하는 반도체 발광소자에 관한 것이다.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)