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Machine translation
1. (WO2017061214) SEMICONDUCTOR ION SENSOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2017/061214    International Application No.:    PCT/JP2016/076120
Publication Date: 13.04.2017 International Filing Date: 06.09.2016
IPC:
G01N 27/414 (2006.01), G01N 27/28 (2006.01)
Applicants: SHARP KABUSHIKI KAISHA [JP/JP]; 1, Takumi-cho, Sakai-ku, Sakai City, Osaka 5908522 (JP)
Inventors: SUZUKI, Yoshihide; (--).
NAKAHASHI, Takahiro; (--).
TAMAI, Yukio; (--)
Agent: HARAKENZO WORLD PATENT & TRADEMARK; Daiwa Minamimorimachi Building, 2-6, Tenjinbashi 2-chome Kita, Kita-ku, Osaka-shi, Osaka 5300041 (JP)
Priority Data:
2015-197611 05.10.2015 JP
Title (EN) SEMICONDUCTOR ION SENSOR
(FR) CAPTEUR D'IONS SEMI-CONDUCTEUR
(JA) 半導体イオンセンサ
Abstract: front page image
(EN)Provided is a semiconductor ion sensor which enables efficient detection of ion concentration with a small and simple structure, wherein an elastic frame body (15) is bonded to a top surface of a sensor chip (1) in such a manner as to surround a region where a sensitive film (2) is to be formed in the sensor chip (1).
(FR)L'invention concerne un capteur d'ions semi-conducteur, qui permet la détection efficace de concentration d'ions grâce à une structure petite et simple, un corps de cadre élastique (15) étant lié à une surface supérieure d'une puce de capteur (1) de façon à entourer une région où un film sensible (2) doit être formé dans la puce de capteur (1).
(JA)小型かつ簡易な構造でイオン濃度を効率よく検出することができる半導体イオンセンサを提供する。弾性を有する枠体(15)が、センサチップ(1)における感応膜(2)が形成される領域を取り囲むように、センサチップ(1)の上面に接合されている。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)