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Machine translation
1. (WO2017058928) EPITAXIAL GROWTH OF DEFECT-FREE, WAFER-SCALE SINGLE-LAYER GRAPHENE ON THIN FILMS OF COBALT
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2017/058928    International Application No.:    PCT/US2016/054202
Publication Date: 06.04.2017 International Filing Date: 28.09.2016
IPC:
C30B 25/18 (2006.01), C30B 29/02 (2006.01)
Applicants: SUNEDISON SEMICONDUCTOR LIMITED [SG/SG]; 9 Battery Road #15-01, Straits Trading Building Singapore 049910 (SG).
THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOIS [US/US]; 352 Henry Administration Building 506 S. Wright Street Urbana, Illinois 61801 (US)
Inventors: BERRY, Vikas; (US).
BEHURA, Sanjay; (US).
NGUYEN, Phong; (US).
SEACRIST, Michael R.; (US)
Agent: SCHUTH, Richard A.; (US).
KEPPEL, Nicholas A.; (US).
RASCHE, Patrick W.; (US).
SLATER, Brian T.; (US).
MUNSELL, Michael G.; (US).
VANDER MOLEN, Michael J.; (US).
RAYMOND, Donald D., Jr; (US).
COYLE, Patrick; (US).
HARPER, James D.; (US).
MUELLER, Jacob R.; (US).
ALLEN, Derick E.; (US).
ATKINS, Bruce T.; (US).
BEULICK, John S.; (US).
BRENNAN, Patrick E.; (US).
BRIDGE, Richard L.; (US).
BROPHY, Richard L.; (US).
FITZGERALD, Daniel M.; (US).
FLOREK, Erin M.; (US).
GOFF, Christopher M.; (US).
HARPER, Jesse S.; (US).
HEINEN, James M., Jr.; (US).
HILMERT, Laura J.; (US).
HOEKEL, Jennifer E.; (US).
REESER, Robert B., III; (US).
THOMAS, Mark A.; (US).
THOMAS, Richard; (US).
WULLER, Adam R.; (US).
ZYCHLEWICZ, William J.; (US).
LONGMEYER, Michael H.; (US).
POLAND, Eric G.; (US).
AMODIO, Lucas M.; (US).
BLOCK, Zachary J.; (US).
MOLLER-JACOBS, Rose L.; (US).
MCCAY, Michael G.; (US).
VANVLIET, David S.; (US).
WESTON, Daniel F.; (US).
DINGLEDINE, Grant A.; (US).
BUTLER, Christopher H.; (US).
FISCHER, William M.; (US).
SNIDER, Josh C.; (US).
SYKES, Robert S.; (US).
MIKA, David R.; (US).
MCCOLLUM, Darin L.; (US).
VANENGELEN, Catherine E.; (US).
SOOTER, Miranda M.; (US)
Priority Data:
62/235,800 01.10.2015 US
Title (EN) EPITAXIAL GROWTH OF DEFECT-FREE, WAFER-SCALE SINGLE-LAYER GRAPHENE ON THIN FILMS OF COBALT
(FR) CROISSANCE ÉPITAXIALE DE GRAPHÈNE MONOCOUCHE, À L’ÉCHELLE DE LA TRANCHE ET SANS DÉFAUT, SUR DES FILMS MINCES DE COBALT
Abstract: front page image
(EN)A method for depositing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate is provided. Due to the strong adhesion of graphene and cobalt to a semiconductor substrate, the layer of graphene is epitaxially deposited.
(FR)La présente invention concerne de manière générale un procédé de dépôt d'une couche de graphène directement sur la surface d'un substrat, tel qu'un substrat à semi-conducteur. Du fait de la forte adhérence du graphène et du cobalt sur un substrat à semi-conducteur, la couche de graphène est déposée de manière épitaxiale.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)