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1. (WO2017057997) LIGHT EMITTING DIODE DEVICES WITH ZINC OXIDE LAYER

Pub. No.:    WO/2017/057997    International Application No.:    PCT/KR2016/011082
Publication Date: Fri Apr 07 01:59:59 CEST 2017 International Filing Date: Wed Oct 05 01:59:59 CEST 2016
IPC: H01L 33/02
H01L 33/44
H01L 33/14
Applicants: SEOUL VIOSYS CO., LTD.
Inventors: LEE, Seom Geun
YANG, Myoung Hak
SHIN, Chan Seob
LEE, Jin Woong
Title: LIGHT EMITTING DIODE DEVICES WITH ZINC OXIDE LAYER
Abstract:
LED devices having high-quality single crystal ZnO structures for spreading currents and extracting light out of the LEDs are disclosed. In one aspect, a LED device is provided to include a substrate; a first semiconductor layer exhibiting a first conductivity type and formed over the substrate; an active light-emitting structure formed over the first semiconductor layer, the active light-emitting structure operable to emit light under electrical excitation; a second semiconductor layer exhibiting a second conductivity type and formed over the active light-emitting structure; and a single crystal ZnO structure formed over the second semiconductor layer and including a bottom single crystal ZnO portion over the second semiconductor layer and a top single crystal ZnO portion extending from the bottom single crystal ZnO portion, wherein the bottom single crystal ZnO portion is a contiguous single crystal ZnO portion without having voids.