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1. (WO2017057906) CMP SLURRY COMPOSITION FOR POLISHING ORGANIC FILM AND POLISHING METHOD USING SAME
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Pub. No.: WO/2017/057906 International Application No.: PCT/KR2016/010874
Publication Date: 06.04.2017 International Filing Date: 29.09.2016
IPC:
C09K 3/14 (2006.01) ,C09G 1/02 (2006.01) ,H01L 21/306 (2006.01)
Applicants: SAMSUNG SDI CO., LTD.[KR/KR]; 150-20, Gongse-ro, Giheung-gu Yongin-si Gyeonggi-do 17084, KR
Inventors: CHOI, Jung Min; KR
NOJO, Haruki; KR
KIM, Go Un; KR
KIM, Yong Kuk; KR
PARK, Yong Soon; KR
Agent: AJU INT'L LAW & PATENT GROUP; 12-13th Floor, Gangnam Mirae Tower, 174 Saimdang- Ro Seocho-Gu Seoul 06627, KR
Priority Data:
10-2015-013939402.10.2015KR
Title (EN) CMP SLURRY COMPOSITION FOR POLISHING ORGANIC FILM AND POLISHING METHOD USING SAME
(FR) COMPOSITION DE SUSPENSION DE CMP POUR POLISSAGE DE FILM ORGANIQUE ET PROCÉDÉ DE POLISSAGE UTILISANT LADITE COMPOSITION
(KO) 유기막 연마용 CMP 슬러리 조성물 및 이를 이용한 연마방법
Abstract:
(EN) The present invention relates to a CMP slurry composition, for polishing an organic film, comprising: cerium salts comprising ultrapure water, abrasives and cerium (IV) ions; and an oxidizing agent, wherein the oxidizing agent has an oxidation potential of 1.72eV or higher in an acidic region and has a pH value of from 1 to 7. The CMP slurry composition enables stabilization of cerium (IV) ions (Ce4+) even at a pH of 1 or higher. Therefore, the present invention shows enhanced polishing effects on an organic film and enables easily organic film polishing, and particularly self-aligned double patterning, by means of an organic film polishing method using the CMP slurry composition.
(FR) La présente invention concerne une composition de suspension de CMP, permettant de polir un film organique, comprenant : des sels de cérium comprenant de l'eau ultrapure, des abrasifs et des ions cérium (IV) ; et un agent oxydant, l'agent oxydant possédant un potentiel d'oxydation supérieur ou égal à 1,72 eV dans une région acide et possédant une valeur de pH de 1 à 7. La composition de suspension de CMP permet la stabilisation des ions cérium (IV) (Ce4+) même à un pH supérieur ou égal à 1. Par conséquent, la présente invention présente des effets de polissage améliorés sur un film organique et permet de polir facilement un film organique, en particulier une formation de motifs doubles auto-alignés, au moyen d'un procédé de polissage de film organique utilisant la composition de suspension de CMP.
(KO) 본 발명은 초순수, 연마제, 4가 세륨이온을 포함하는 세륨염; 및 산화제를 포함하고, 상기 산화제는 산성 영역에서 1.72eV 이상의 산화전위를 가지며, pH값이 1내지 7인 것을 특징으로 하는 유기막 연마용 CMP 슬러리 조성물에 관한 것이다. 상기 CMP 슬러리 조성물은 4가 세륨이온(Ce4+)을 pH 1이상에서도 안정화시킬 수 있으므로 유기막에 대한 연마효과가 우수하며, 상기 CMP 슬러리 조성물을 이용한 연마방법에 의하여 유기막 연마 공정, 특히, 자가정렬 이중 패턴 공정에서 유기막 연마방법이 용이하게 이루어질 수 있다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Korean (KO)
Filing Language: Korean (KO)