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1. (WO2017057902) ELECTRODE STRUCTURE AND LIGHT-EMITTING ELEMENT COMPRISING SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2017/057902    International Application No.:    PCT/KR2016/010870
Publication Date: 06.04.2017 International Filing Date: 29.09.2016
IPC:
H01L 33/36 (2010.01), H01L 33/46 (2010.01)
Applicants: KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION [KR/KR]; Korea University (Anam-dong 5-ga) 145, Anam-ro Seongbuk-gu Seoul 02841 (KR)
Inventors: SEONG, Tae Yeon; (KR).
KIM, Dae Hyun; (KR)
Agent: LEE, Dong Gun; (KR)
Priority Data:
10-2015-0138142 30.09.2015 KR
Title (EN) ELECTRODE STRUCTURE AND LIGHT-EMITTING ELEMENT COMPRISING SAME
(FR) STRUCTURE D’ÉLECTRODE ET ÉLÉMENT ÉLECTROLUMINESCENT COMPRENANT CELLE-CI
(KO) 전극 구조체 및 이를 포함하는 발광 소자
Abstract: front page image
(EN)An electrode structure formed on a p-type semiconductor layer comprises: a metal base reflecting layer, which is formed on the p-type semiconductor layer, and which comprises a metal base and a diffusing material; a metal electrode, which is formed on the upper portion of the metal base reflecting layer, and which is made of a metal; and a diffusion suppressing film interposed between the metal base reflecting layer and the metal electrode so as to suppress diffusion of the diffusing material towards the metal electrode during a heat treatment process for heat-treating the metal base reflecting layer such that the diffusing material diffuses into the p-type semiconductor layer and functions as an acceptor inside the p-type semiconductor layer.
(FR)L'invention concerne une structure d'électrode formée sur une couche semi-conductrice de type p, comprenant : une couche réfléchissante de base métallique qui est formée sur la couche semi-conductrice de type p et qui comprend une base métallique et un matériau de diffusion ; une électrode métallique qui est formée sur la portion supérieure de la couche réfléchissante de base métallique et qui est composée d'un métal ; et un film de suppression de diffusion interposé entre la couche réfléchissante de base métallique et l'électrode métallique, de manière à supprimer la diffusion du matériau de diffusion vers l'électrode métallique pendant un processus de traitement thermique pour traiter par voie thermique la couche réfléchissante de base métallique, de sorte que le matériau de diffusion diffuse dans la couche semi-conductrice de type p et fonctionne comme un accepteur à l'intérieur de la couche semi-conductrice de type p.
(KO)P형 반도체층 상에 형성된 전극 구조체는, 상기 P형 반도체 층에 형성되며, 금속 베이스와 확산 물질을 포함하는 금속 베이스 반사층, 상기 금속 베이스 반사층의 상부에 형성되며, 금속으로 이루어진 금속 전극, 상기 금속 베이스 반사층 및 상기 금속 전극 사이에 개재되며, 상기 금속 베이스 반사층을 열처리하여 상기 확산 물질이 상기 P형 반도체층 내에 확산되어 상기 P형 반도체층 내에 어셉터로서 기능시키는 열처리 공정 중 상기 확산 물질이 상기 금속 전극을 향하여 확산되는 것을 억제하는 확산 억제막을 포함한다.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Korean (KO)
Filing Language: Korean (KO)