Some content of this application is unavailable at the moment.
If this situation persist, please contact us atFeedback&Contact
1. (WO2017057623) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
Latest bibliographic data on file with the International Bureau    Submit observation

Pub. No.: WO/2017/057623 International Application No.: PCT/JP2016/078903
Publication Date: 06.04.2017 International Filing Date: 29.09.2016
IPC:
H01L 21/304 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
Applicants:
東京エレクトロン株式会社 TOKYO ELECTRON LIMITED [JP/JP]; 東京都港区赤坂五丁目3番1号 3-1, Akasaka 5-chome, Minato-ku, Tokyo 1076325, JP
Inventors:
江頭 浩司 EGASHIRA Koji; JP
山下 剛秀 YAMASHITA Masami; JP
本田 儀幸 HONDA Yoshiyuki; JP
吉田 祐希 YOSHIDA Yuki; JP
川渕 洋介 KAWABUCHI Yosuke; JP
Agent:
永井 浩之 NAGAI Hiroshi; JP
中村 行孝 NAKAMURA Yukitaka; JP
佐藤 泰和 SATO Yasukazu; JP
朝倉 悟 ASAKURA Satoru; JP
森 秀行 MORI Hideyuki; JP
Priority Data:
2015-19355030.09.2015JP
2016-12467223.06.2016JP
Title (EN) SUBSTRATE PROCESSING DEVICE AND SUBSTRATE PROCESSING METHOD
(FR) DISPOSITIF DE TRAITEMENT DE SUBSTRAT ET PROCÉDÉ DE TRAITEMENT DE SUBSTRAT
(JA) 基板処理装置および基板処理方法
Abstract:
(EN) Gas injection ports (74, 205) for injecting a gas are provided to positions set outside of the end edges of substrates (W) that are held by substrate holders (89, 204) within a treatment chamber (81, 201). The gas injected from the gas injection ports (74, 205) form a gas flow that flows in the direction following first surfaces (obverse faces) of the substrates held by the substrate holding parts. Sublimated gas of sublimatable matter and foreign matter contained in the gas are carried along with the gas flow and removed from the vicinity of the substrates. The gas also acts as a medium for transferring heat from heating parts (88, 203) to the substrates.
(FR) Selon l’invention, des ports d’injection (74, 205) de gaz pour l’injection d’un gaz sont disposés à des positions définies à l’extérieur des bords d’extrémité de substrats (W) qui sont maintenus par des porte-substrats (89, 204) à l’intérieur d’une chambre de traitement (81, 201). Le gaz injecté par les ports d’injection (74, 205) de gaz forme un écoulement de gaz qui s’écoule dans la direction suivant les premières surfaces (faces avant) des substrats maintenus par les parties porte-substrats. Du gaz sublimé de matière sublimable et de la matière étrangère contenue dans le gaz sont transportés avec l’écoulement de gaz et retirés du voisinage des substrats. Le gaz agit également comme un milieu de transfert de chaleur depuis des parties chauffantes (88, 203) vers les substrats.
(JA) 処理室(81,201)内の基板保持部(89,204)により保持された基板(W)の端縁よりも外側の位置にガスを噴射するガス噴射口(74,205)を設ける。ガス噴射口(74,205)から噴射されたガスは、基板保持部により保持された基板の第1面(表面)に沿う方向に流れるガスの流れを形成する。ガスの流れに乗り、昇華した昇華性物質のガスおよびガスに含まれる異物が基板の近傍から除去される。ガスは、加熱部(88,203)から基板への伝熱媒体としても作用する。
front page image
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)