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1. (WO2017057556) LIGHT-TRANSMISSIVE CONDUCTIVE FILM AND MANUFACTURING METHOD FOR ANNEALED LIGHT-TRANSMISSIVE CONDUCTIVE FILM
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Pub. No.: WO/2017/057556 International Application No.: PCT/JP2016/078794
Publication Date: 06.04.2017 International Filing Date: 29.09.2016
IPC:
H01B 5/14 (2006.01) ,B32B 7/02 (2006.01) ,B32B 9/00 (2006.01) ,C23C 14/08 (2006.01) ,C23C 14/34 (2006.01) ,H01B 13/00 (2006.01) ,C23C 14/35 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
5
Non-insulated conductors or conductive bodies characterised by their form
14
comprising conductive layers or films on insulating-supports
B PERFORMING OPERATIONS; TRANSPORTING
32
LAYERED PRODUCTS
B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
7
Layered products characterised by the relation between layers, i.e. products essentially comprising layers having different physical properties or products characterised by the interconnection of layers
02
in respect of physical properties, e.g. hardness
B PERFORMING OPERATIONS; TRANSPORTING
32
LAYERED PRODUCTS
B
LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
9
Layered products essentially comprising a particular substance not covered by groups B32B11/-B32B29/137
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06
characterised by the coating material
08
Oxides
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
B
CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
13
Apparatus or processes specially adapted for manufacturing conductors or cables
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14
Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22
characterised by the process of coating
34
Sputtering
35
by application of a magnetic field, e.g. magnetron sputtering
Applicants:
積水化学工業株式会社 SEKISUI CHEMICAL CO., LTD. [JP/JP]; 大阪府大阪市北区西天満2丁目4番4号 4-4, Nishitemma 2-chome, Kita-ku, Osaka-shi, Osaka 5308565, JP
Inventors:
小山 健史 KOYAMA, Takefumi; JP
増澤 健二 MASUZAWA, Kenji; JP
村上 淳之介 MURAKAMI, Junnosuke; JP
福田 崇志 FUKUDA, Takashi; JP
Agent:
特許業務法人 宮▲崎▼・目次特許事務所 MIYAZAKI & METSUGI; 大阪府大阪市中央区常盤町1丁目3番8号 中央大通FNビル Chuo Odori FN Bldg., 3-8, Tokiwamachi 1-chome, Chuo-ku, Osaka-shi, Osaka 5400028, JP
Priority Data:
2015-19541430.09.2015JP
Title (EN) LIGHT-TRANSMISSIVE CONDUCTIVE FILM AND MANUFACTURING METHOD FOR ANNEALED LIGHT-TRANSMISSIVE CONDUCTIVE FILM
(FR) FILM CONDUCTEUR TRANSMETTANT LA LUMIÈRE ET PROCÉDÉ DE FABRICATION DE FILM CONDUCTEUR TRANSMETTANT LA LUMIÈRE RECUIT
(JA) 光透過性導電フィルム、及び、アニール処理された光透過性導電フィルムの製造方法
Abstract:
(EN) Provided is a light-transmissive conductive film that can have a low resistance value even if the light-transmissive conductive film is subjected to annealing in a short time. The light-transmissive conductive film according to the present invention is provided with: a conductive layer having light transmission property and conductivity; and a substrate disposed on one surface side of the conductive layer. The conductive layer is an amorphous layer of an indium tin oxide. Of the total content 100 wt% of In atoms and Sn atoms in the conductive layer, the content of Sn atoms is 7 wt% or more. The carrier density in the conductive layer is 4×1020/cm3 to 6×1020/cm3. The hole mobility in the conductive layer is 20cm2/V·s to 28cm2/V·s.
(FR) L'invention concerne un film conducteur transmettant la lumière qui peut présenter une faible valeur de résistance même si le film conducteur transmettant la lumière est soumis à un recuit pendant une courte durée. Le film conducteur transmettant la lumière selon la présente invention comprend : une couche conductrice possédant des propriétés de transmission de lumière et de conductivité ; et un substrat disposé sur un côté de surface de la couche conductrice. La couche conductrice est une couche amorphe d'un oxyde d'indium-étain. Parmi la teneur totale de 100 % en poids d'atomes d'In et d'atomes de Sn dans la couche conductrice, la teneur en atomes de Sn est supérieure ou égale à 7 % en poids. La densité des porteurs dans la couche conductrice est de 4 x 1020/cm3 à 6 x 1020/cm3. La mobilité des trous dans la couche conductrice est de 20 cm2/V·s à 28 cm2/V·s.
(JA) アニール処理を短時間で行ったとしても、抵抗値を低くすることができる光透過性導電フィルムを提供する。 本発明に係る光透過性導電フィルムは、光透過性及び導電性を有する導電層と、前記導電層の一方の表面側に配置されている基材とを備え、前記導電層は、インジウム・スズ酸化物の非晶質層であり、前記導電層におけるIn原子とSn原子との合計の含有量100重量%中、Sn原子の含有量が7重量%以上であり、前記導電層のキャリア密度が4×1020/cm以上、6×1020/cm以下であり、前記導電層のホール移動度が20cm/V・s以上、28cm/V・s以下である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)