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1. (WO2017057329) TUNNEL FIELD EFFECT TRANSISTOR
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Pub. No.: WO/2017/057329 International Application No.: PCT/JP2016/078393
Publication Date: 06.04.2017 International Filing Date: 27.09.2016
IPC:
H01L 21/336 (2006.01) ,H01L 21/337 (2006.01) ,H01L 21/338 (2006.01) ,H01L 27/095 (2006.01) ,H01L 29/06 (2006.01) ,H01L 29/66 (2006.01) ,H01L 29/778 (2006.01) ,H01L 29/78 (2006.01) ,H01L 29/808 (2006.01) ,H01L 29/812 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
337
with a PN junction gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
338
with a Schottky gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
08
including only semiconductor components of a single kind
085
including field-effect components only
095
the components being Schottky barrier gate field-effect transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
02
Semiconductor bodies
06
characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
778
with two-dimensional charge carrier gas channel, e.g. HEMT
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
80
with field effect produced by a PN or other rectifying junction gate
808
with a PN junction gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
80
with field effect produced by a PN or other rectifying junction gate
812
with a Schottky gate
Applicants:
国立大学法人北海道大学 NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY [JP/JP]; 北海道札幌市北区北8条西5丁目 Kita 8-jyo Nishi 5-chome, Kita-ku, Sapporo-shi, Hokkaido 0600808, JP (AE, AG, AM, AO, AU, AZ, BA, BB, BF, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CI, CL, CM, CO, CR, CU, DJ, DM, DO, DZ, EC, EG, GA, GD, GE, GH, GM, GN, GQ, GT, GW, HN, ID, IL, IN, IR, JP, KE, KG, KM, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LY, MA, MD, ME, MG, ML, MN, MR, MW, MX, MY, MZ, NA, NE, NG, NI, NZ, OM, PA, PE, PG, PH, QA, RU, RW, SA, SC, SD, SG, SL, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW)
国立研究開発法人科学技術振興機構 JAPAN SCIENCE AND TECHNOLOGY AGENCY [JP/JP]; 埼玉県川口市本町4丁目1番8号 4-1-8, Honcho, Kawaguchi-shi, Saitama 3320012, JP
Inventors:
福井 孝志 FUKUI, Takashi; JP
冨岡 克広 TOMIOKA, Katsuhiro; JP
Agent:
鷲田 公一 WASHIDA, Kimihito; JP
Priority Data:
2015-19319630.09.2015JP
Title (EN) TUNNEL FIELD EFFECT TRANSISTOR
(FR) TRANSISTOR À EFFET DE CHAMP ET À EFFET TUNNEL
(JA) トンネル電界効果トランジスタ
Abstract:
(EN) The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.
(FR) Le transistor à effet de champ et à effet tunnel selon la présente invention comporte : un canal ; une électrode de source connectée directement ou indirectement à une extrémité du canal ; une électrode de drain connectée directement ou indirectement à l'autre extrémité du canal ; et une électrode de grille permettant d'amener un champ électrique à agir sur le canal, de générer un phénomène de tunnel au niveau de la partie de joint côté électrode de source du canal, et de générer simultanément un gaz électronique bidimensionnel dans le canal.
(JA) 本発明に係るトンネル電界効果トランジスタは、チャネルと、前記チャネルの一端に直接または間接的に接続されたソース電極と、前記チャネルの他端に直接または間接的に接続されたドレイン電極と、前記チャネルに電界を作用させて、前記チャネルの前記ソース電極側の接合部にトンネル現象を生じさせるとともに、同時に前記チャネルに二次元電子ガスを生じさせるゲート電極と、を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)