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1. (WO2017057329) TUNNEL FIELD EFFECT TRANSISTOR
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2017/057329    International Application No.:    PCT/JP2016/078393
Publication Date: 06.04.2017 International Filing Date: 27.09.2016
IPC:
H01L 21/336 (2006.01), H01L 21/337 (2006.01), H01L 21/338 (2006.01), H01L 27/095 (2006.01), H01L 29/06 (2006.01), H01L 29/66 (2006.01), H01L 29/778 (2006.01), H01L 29/78 (2006.01), H01L 29/808 (2006.01), H01L 29/812 (2006.01)
Applicants: NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY [JP/JP]; Kita 8-jyo Nishi 5-chome, Kita-ku, Sapporo-shi, Hokkaido 0600808 (JP) (AE, AG, AM, AO, AU, AZ, BA, BB, BF, BH, BJ, BN, BR, BW, BY, BZ, CA, CF, CG, CI, CL, CM, CO, CR, CU, DJ, DM, DO, DZ, EC, EG, GA, GD, GE, GH, GM, GN, GQ, GT, GW, HN, ID, IL, IN, IR, JP, KE, KG, KM, KN, KP, KW, KZ, LA, LC, LK, LR, LS, LY, MA, MD, ME, MG, ML, MN, MR, MW, MX, MY, MZ, NA, NE, NG, NI, NZ, OM, PA, PE, PG, PH, QA, RU, RW, SA, SC, SD, SG, SL, SN, ST, SV, SY, SZ, TD, TG, TH, TJ, TM, TN, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW only).
JAPAN SCIENCE AND TECHNOLOGY AGENCY [JP/JP]; 4-1-8, Honcho, Kawaguchi-shi, Saitama 3320012 (JP)
Inventors: FUKUI, Takashi; (JP).
TOMIOKA, Katsuhiro; (JP)
Agent: WASHIDA, Kimihito; (JP)
Priority Data:
2015-193196 30.09.2015 JP
Title (EN) TUNNEL FIELD EFFECT TRANSISTOR
(FR) TRANSISTOR À EFFET DE CHAMP ET À EFFET TUNNEL
(JA) トンネル電界効果トランジスタ
Abstract: front page image
(EN)The tunnel field effect transistor according to the present invention has: a channel; a source electrode connected directly or indirectly to one end of the channel; a drain electrode connected directly or indirectly to the other end of the channel; and a gate electrode for causing an electric field to act on the channel, generating a tunnel phenomenon at the source electrode-side joint part of the channel, and simultaneously generating a two-dimensional electron gas in the channel.
(FR)Le transistor à effet de champ et à effet tunnel selon la présente invention comporte : un canal ; une électrode de source connectée directement ou indirectement à une extrémité du canal ; une électrode de drain connectée directement ou indirectement à l'autre extrémité du canal ; et une électrode de grille permettant d'amener un champ électrique à agir sur le canal, de générer un phénomène de tunnel au niveau de la partie de joint côté électrode de source du canal, et de générer simultanément un gaz électronique bidimensionnel dans le canal.
(JA)本発明に係るトンネル電界効果トランジスタは、チャネルと、前記チャネルの一端に直接または間接的に接続されたソース電極と、前記チャネルの他端に直接または間接的に接続されたドレイン電極と、前記チャネルに電界を作用させて、前記チャネルの前記ソース電極側の接合部にトンネル現象を生じさせるとともに、同時に前記チャネルに二次元電子ガスを生じさせるゲート電極と、を有する。
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)