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1. (WO2017056378) SOLAR CELL PRODUCTION METHOD
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Pub. No.: WO/2017/056378 International Application No.: PCT/JP2016/003838
Publication Date: 06.04.2017 International Filing Date: 23.08.2016
IPC:
H01L 31/0747 (2012.01) ,H01L 31/0224 (2006.01) ,H01L 31/18 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
06
characterised by at least one potential-jump barrier or surface barrier
072
the potential barriers being only of the PN heterojunction type
0745
comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
0747
comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT solar cells
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Applicants:
パナソニックIPマネジメント株式会社 PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD. [JP/JP]; 大阪府大阪市中央区城見2丁目1番61号 1-61, Shiromi 2-chome, Chuo-ku, Osaka-shi, Osaka 5406207, JP
Inventors:
益子 慶一郎 MASUKO, Keiichiro; --
角村 泰史 TSUNOMURA, Yasufumi; --
Agent:
森下 賢樹 MORISHITA, Sakaki; JP
Priority Data:
2015-19323330.09.2015JP
Title (EN) SOLAR CELL PRODUCTION METHOD
(FR) PROCÉDÉ DE FABRICATION DE CELLULE SOLAIRE
(JA) 太陽電池セルの製造方法
Abstract:
(EN) Provided is a solar cell production method including: a first step in which a thin conductive film layer 20 is formed on a semiconductor substrate 10; a second step in which an insulating film 22 is formed on the thin conductive film layer 20; a third step in which a thin conductive film layer exposure section is formed by removing part of the insulating film 22; a fourth step in which a plating film 24 is formed on the thin conductive film layer exposure section; and a fifth step in which the insulating layer 22 and the thin conductive film layer 20 in an area that does not overlap with the plating film 24 are removed. The plating film 24 formed in the fourth step is formed so as to cover the insulating film 22.
(FR) L'invention concerne un procédé de fabrication de cellule solaire comprenant : une première étape à laquelle une couche de film mince conducteur (20) est formée sur un substrat semi-conducteur (10) ; une deuxième étape à laquelle un film isolant (22) est formé sur la couche de film mince conducteur (20) ; une troisième étape à laquelle une section de mise à nu de couche de film mince conducteur est formée par élimination d'une partie du film isolant (22) ; une quatrième étape à laquelle un film de placage (24) est formé sur la section de mise à nu de couche de film mince conducteur ; et une cinquième étape à laquelle la couche isolante (22) et la couche de film mince conducteur (20) sont éliminées dans une zone qui ne chevauche pas le film de placage (24). Le film de placage (24) formé à la quatrième étape est formé de manière à couvrir le film isolant (22).
(JA) 半導体基板10上に導電性薄膜層20を形成する第1の工程と、導電性薄膜層20上に絶縁膜22を形成する第2の工程と、絶縁膜22を一部除去することにより導電性薄膜層露出部を形成する第3の工程と、導電性薄膜層露出部にめっき被膜24を形成する第4の工程と、めっき被膜24と重ならない領域にある、絶縁膜22及び導電性薄膜層20を除去する第5の工程と、を含む太陽電池セルの製造方法であって、第4の工程で形成するめっき被膜24は絶縁膜22を覆うように形成する、太陽電池セルの製造方法である。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)