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|1. (WO2017056355) SEMICONDUCTOR DEVICE, ULTRASONIC IMAGE PICKUP DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ULTRASONIC IMAGING SYSTEM|
|Title:||SEMICONDUCTOR DEVICE, ULTRASONIC IMAGE PICKUP DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND ULTRASONIC IMAGING SYSTEM|
[Problem] To provide a semiconductor device that is provided with a protection circuit having excellent characteristics even with a small area, an ultrasonic image pickup device, a semiconductor device manufacturing method, and an ultrasonic imaging system. [Solution] A semiconductor device of the present art is provided with an integrated circuit that is formed on an SOI substrate, which is provided with a silicon substrate formed of crystalline silicon, a BOX layer laminated on the silicon substrate, and an SOI layer laminated on the BOX layer. The semiconductor device is also provided with a protection circuit and an element isolation region. The protection circuit is provided with a semiconductor region, which constitutes the integrated circuit, and has crystalline orientation that is same as that of the silicon substrate. The element isolation region penetrates the SOI substrate, and isolates the protection circuit.