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|1. (WO2017056243) METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT APPARATUS, AND PROGRAM|
|Applicants:||HITACHI KOKUSAI ELECTRIC INC.
|Title:||METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE TREATMENT APPARATUS, AND PROGRAM|
To provide a technology whereby uniform substrate treatment can be performed. Provided is a technology having: a step for preparing, in a treatment chamber, a substrate wherein an insulating film as a base film is formed on a pattern having an aspect ratio equal to or higher than 20, and a film to be treated, said film having a thickness equal to or less than 200 Å, is formed on the insulating film; a step for increasing the temperature of the substrate to a first temperature by means of electromagnetic waves supplied from a heating apparatus; a first treatment step for treating the substrate for a first treatment time, while maintaining the first temperature; a step for increasing, after the first treatment step, the temperature of the substrate from the first temperature to a second temperature that is higher than the first temperature by means of electromagnetic waves supplied from the heating apparatus; and a second treatment step for treating the substrate for a second treatment time that is shorter than the first treatment time, while maintaining the second temperature.