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1. (WO2017056155) SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING DEVICE, AND RECORDING MEDIUM
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/056155 International Application No.: PCT/JP2015/077336
Publication Date: 06.04.2017 International Filing Date: 28.09.2015
IPC:
H01L 21/31 (2006.01) ,C23C 16/455 (2006.01) ,H01L 21/316 (2006.01) ,H01L 21/318 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
316
composed of oxides or glassy oxides or oxide-based glass
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
318
composed of nitrides
Applicants: HITACHI KOKUSAI ELECTRIC INC.[JP/JP]; 15-12, Nishi-shimbashi 2-chome, Minato-ku, Tokyo 1058039, JP
Inventors: KOGURA Shintaro; JP
SASAJIMA Ryota; JP
TAKAGI Kosuke; JP
Agent: FUKUOKA Masahiro; JP
Priority Data:
Title (EN) SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SUBSTRATE PROCESSING DEVICE, AND RECORDING MEDIUM
(FR) PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR, DISPOSITIF DE TRAITEMENT DE SUBSTRAT, ET SUPPORT D'ENREGISTREMENT
(JA) 半導体装置の製造方法、基板処理装置および記録媒体
Abstract:
(EN) A semiconductor device manufacturing method has a step for forming a film on a substrate by performing: a step wherein a source gas is supplied with respect to the substrate via a first nozzle; and a step wherein at least one gas selected from the group consisting of an oxygen-containing gas and a gas containing nitrogen and hydrogen is supplied with respect to the substrate via a second nozzle, which is configured such that gas residue is not generated at the surface thereof as easily as with the first nozzle, or is configured such that contact with gas remaining at the surface does not occur as easily as with the first nozzle.
(FR) L'invention concerne un procédé de fabrication de dispositif à semi-conducteur qui comprend une étape de formation d'un film sur un substrat par exécution : d'une étape à laquelle un gaz source est fourni relativement au substrat par l'intermédiaire d'une première buse ; et d'une étape à laquelle au moins un gaz choisi dans le groupe comprenant un gaz contenant de l'oxygène et un gaz contenant de l'azote et de l'hydrogène est fourni relativement au substrat par l'intermédiaire d'une seconde buse, qui est conçue de manière qu'un résidu gazeux ne soit pas généré au niveau de sa surface aussi facilement qu'avec la première buse, ou est conçue de manière qu'un contact avec le gaz restant au niveau de sa surface ne se produise pas aussi facilement qu'avec la première buse.
(JA) 基板に対し、第1ノズルを介して原料ガスを供給する工程と、基板に対し、第1ノズルよりも表面においてガスの滞留を生じさせにくく構成されているか、第1ノズルよりも表面に滞留しているガスに接触しにくく構成されている第2ノズルを介して、酸素含有ガス、および、窒素及び水素を含むガスからなる群より選択される少なくとも1つを供給する工程と、を行うことで、基板上に膜を形成する工程を有する。
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)