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1. (WO2017055850) RESIST COMPOSITION
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Pub. No.: WO/2017/055850 International Application No.: PCT/GB2016/053032
Publication Date: 06.04.2017 International Filing Date: 29.09.2016
IPC:
G03F 7/004 (2006.01) ,G03F 7/20 (2006.01)
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004
Photosensitive materials
04
Chromates
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
Applicants:
THE UNIVERSITY OF MANCHESTER [GB/GB]; Oxford Road Manchester Greater Manchester M13 9PL, GB
Inventors:
LEWIS, Scott; GB
WINPENNY, Richard; GB
YEATES, Stephen; GB
FERNANDEZ, Antonio; GB
Agent:
HGF LIMITED; 4th Floor, Merchant Exchange 17-19 Whitworth Street West Manchester Greater Manchester M1 5WG, GB
Priority Data:
1517273.730.09.2015GB
Title (EN) RESIST COMPOSITION
(FR) COMPOSITION DE RÉSERVE
Abstract:
(EN) The present invention relates to resist compositons, in particular to photoresists that can be used in photolithography, especially in the fabrication of integrated circuits and derivative products. The resist compositions of the invention include an anti-scattering component which has a significant amount of empty space, and thus fewer scattering centers, such that radiation-scattering events are more limited during exposure. Such anti-scattering effects can lead to improved resolutions by reducing the usual proximity effects associated with lithographic techniques, allowing the production of smaller, higher resolution microchips. Furthermore, certain embodiments involve anti-scattering components which are directly linked to the resist components, which can improve the overall lithographic chemistry to provide benefits both in terms of resolution and resist sensitivity.
(FR) La présente invention concerne des compositions de réserve, en particulier des résines photosensibles qui peuvent être utilisées en photolithographie, en particulier dans la fabrication de circuits intégrés et de produits dérivés. Les compositions de réserve selon l'invention comprennent un constituant antidiffusion qui comprend un degré important d'espace vide et, ainsi, un nombre inférieur de centres de diffusion, de sorte que des événements de diffusion de rayonnement soient plus limités pendant l'exposition. Ces effets antidiffusion peuvent conduire à des résolutions améliorées par réduction des effets de proximité habituels associés à des techniques lithographiques, permettant la production de micropuces de dimensions inférieures et de résolution supérieure. En outre, certains modes de réalisation font appel à des constituants antidiffusion qui sont directement liés aux constituants de réserve, ce qui peut améliorer la chimie lithographique dans son ensemble pour offrir des avantages à la fois en termes de résolution et de sensibilité de réserve.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)