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1. (WO2017055709) ELEMENTARY ELECTRONIC CIRCUIT FOR STAGE OF AMPLIFICATION OR REPEAT OF ANALOG SIGNALS
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2017/055709    International Application No.:    PCT/FR2016/052394
Publication Date: 06.04.2017 International Filing Date: 21.09.2016
IPC:
H03K 17/082 (2006.01), H03K 19/003 (2006.01), G05F 3/20 (2006.01)
Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES [FR/FR]; Bâtiment Le Ponant D 25, Rue Leblanc 75015 Paris (FR).
UNIVERSITE NICE SOPHIA ANTIPOLIS [FR/FR]; Grand Château Parc Valrose, 28 avenue Valrose BP 2135 06103 Nice (FR)
Inventors: AUDEBERT, Patrick; (FR).
DE FOUCAULD, Emeric; (FR).
LEDUC, Yves; (FR).
JACQUEMOD, Gilles; (FR).
WEI, Zhaopeng; (FR).
LORENZINI, Philippe; (FR)
Agent: CABINET BEAUMONT; 1, Rue Champollion 38000 Grenoble (FR)
Priority Data:
1559116 28.09.2015 FR
Title (EN) ELEMENTARY ELECTRONIC CIRCUIT FOR STAGE OF AMPLIFICATION OR REPEAT OF ANALOG SIGNALS
(FR) CIRCUIT ELECTRONIQUE ELEMENTAIRE POUR ETAGE D'AMPLIFICATION OU DE RECOPIE DE SIGNAUX ANALOGIQUES
Abstract: front page image
(EN)The invention relates to an electronic circuit (300) comprising: at least one first multi-gate transistor (301) comprising a first gate (g) and a second gate (bg) different from the first gate; and a regulation unit (303) designed to measure a variable representing the drain-source voltage (Vds) of the first transistor and to apply a polarisation potential (Vbg) as a function of said variable to the second gate (bg) of the first transistor (301).
(FR)L'invention concerne un circuit électronique (300) comportant: au moins un premier transistor MOS multi-grilles (301) comportant une première grille (g) et une deuxième grille (bg) distincte de la première grille; et une unité de régulation (303) adaptée à mesurer une grandeur représentative de la tension drain-source (Vds) du premier transistor et à appliquer sur la deuxième grille (bg) du premier transistor (301) un potentiel de polarisation (Vbg) fonction de ladite grandeur.
Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW.
African Regional Intellectual Property Organization (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG).
Publication Language: French (FR)
Filing Language: French (FR)