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|1. (WO2017054613) SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF|
|Applicants:||XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.
|Title:||SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREOF|
A semiconductor element that avoids, by means of using a metal protection layer (21) and a metal oxide protection layer (22) grown on a substrate (10), the formation of an amorphous layer on the surface of the silicon substrate; and that uses an intermediate layer (23) to reduce the difference in lattice between the metal oxide protection layer and a group III-IV buffer layer (24), improving the crystal quality of the group III-IV buffer layer. Provided at the same time is a manufacturing method, which can avoid the formation of an amorphous layer near the interface of a silicon substrate, thereby avoiding the emergence of cracks. Moreover, a light-emitting diode or transistor element is manufactured by means of making good use of a high-quality multi-layered buffer structure deposited using PVD method and an epitaxial layer of gallium nitride, indium gallium nitride or aluminum gallium nitride grown on said buffer structure.