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1. (WO2017054271) LOW-TEMPERATURE POLY-SILICON TFT SUBSTRATE

Pub. No.:    WO/2017/054271    International Application No.:    PCT/CN2015/092792
Publication Date: Fri Apr 07 01:59:59 CEST 2017 International Filing Date: Tue Oct 27 00:59:59 CET 2015
IPC: H01L 27/12
Applicants: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
深圳市华星光电技术有限公司
WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
武汉华星光电技术有限公司
Inventors: XU, Yong
许勇
Title: LOW-TEMPERATURE POLY-SILICON TFT SUBSTRATE
Abstract:
Provided is a low-temperature poly-silicon TFT substrate. A black matrix (2) of said substrate is located on a first buffer layer (31) of the low-temperature poly-silicon TFT substrate (1). A TFT device is located in the region covered by the black matrix (2). This can prevent the TFT device from being influenced by illumination, ensuring the stability of the TFT device. Moreover, the process of manufacturing a shielding metal layer is left out, and a photo-mask is retrenched, saving the production cost, such that the black matrix, instead of a shielding metal layer in the prior art, can further shield the TFT device from light while achieving the black matrix’s own effect (shielding light leakage of the pixel), achieving double effects.