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1. (WO2017041485) THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR AND DISPLAY PANEL

Pub. No.:    WO/2017/041485    International Application No.:    PCT/CN2016/078671
Publication Date: Fri Mar 17 00:59:59 CET 2017 International Filing Date: Fri Apr 08 01:59:59 CEST 2016
IPC: H01L 29/786
H01L 21/336
Applicants: BOE TECHNOLOGY GROUP CO., LTD.
京东方科技集团股份有限公司
Inventors: SUN, Hongda
孙宏达
SONG, Youngsuk
宋泳锡
FANG, Jingang
方金钢
Title: THIN-FILM TRANSISTOR, MANUFACTURING METHOD THEREFOR AND DISPLAY PANEL
Abstract:
A thin-film transistor, a manufacturing method therefor and a display panel. The thin-film transistor comprises a metal electrode (4). The steps of forming the metal electrode comprise: forming a first material layer (2) on a base substrate (1); patterning the first material layer, and forming a groove pattern (21) in the first material layer, wherein the groove pattern matches the pattern of the metal electrode to be formed; forming the metal electrode in the groove pattern, so that there is a gap between the edge of the metal electrode and the edge of the groove pattern; and forming a protection pattern (51) on a substrate on which the metal electrode is formed, wherein the protection pattern covers the metal electrode and the edge thereof. The metal electrode has the protection pattern thereon, which has the function of effectively protecting conductive metal.