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1. (WO2017041401) RAPID GROWTH OF LARGE SINGLE-CRYSTAL GRAPHENE ASSISTED BY ADJACENT OXIDE SUBSTRATE
Latest bibliographic data on file with the International Bureau   

Pub. No.: WO/2017/041401 International Application No.: PCT/CN2016/000282
Publication Date: 16.03.2017 International Filing Date: 26.05.2016
IPC:
C30B 29/02 (2006.01) ,C30B 25/18 (2006.01)
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29
Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02
Elements
C CHEMISTRY; METALLURGY
30
CRYSTAL GROWTH
B
SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25
Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02
Epitaxial-layer growth
18
characterised by the substrate
Applicants:
PEKING UNIVERSITY [CN/CN]; LIU, Kaihui No.5 Yiheyuan Road, Haidian District Beijing 100871, CN
Inventors:
LIU, Kaihui; CN
XU, Xiaozhi; CN
ZHANG, Zhihong; CN
YU, Dapeng; CN
WANG, Enge; CN
Priority Data:
201510561590.X07.09.2015CN
201610191702.130.03.2016CN
Title (EN) RAPID GROWTH OF LARGE SINGLE-CRYSTAL GRAPHENE ASSISTED BY ADJACENT OXIDE SUBSTRATE
(FR) CROISSANCE RAPIDE DE GRAPHÈNE MONOCRISTALLIN DE GRANDE TAILLE ASSISTÉE PAR UN SUBSTRAT D'OXYDE ADJACENT
Abstract:
(EN) Disclosed here is a method for rapid growth of large single-crystal graphene assisted by adjacent oxide substrate with chemical vapour deposition system under atmospheric pressure, wherein metal foils are naturally placed on oxide substrates with very narrow spaces between them. O released from the oxide substrates at high temperature could diffuse to the metal surface and involve in the catalytic reactions on the surface of metal foils. This would drastically lower the barrier of the feedstock decomposition and increase the carbon species supply by orders of magnitude, which enables the rapid growth. This method solves a lot of problems in the field of large single-crystal graphene growth, such as expensive monocrystalline substrates, complex pre-treatment of metal foils and a rather long growth cycle. Thus our technique realizes the synthesis of large single-crystal in a very short time and with an efficient cost.
(FR) La présente invention concerne un procédé pour la croissance rapide d'un graphène monocristallin de grande taille assistée par un substrat d'oxyde adjacent avec un système de dépôt chimique en phase vapeur sous pression atmosphérique, dans lequel des feuilles métalliques sont placées naturellement sur des substrats d'oxyde avec des espaces très étroits entre celles-ci. O libéré par les substrats d'oxyde à haute température peut avoir diffusé jusqu'à la surface du métal et être impliqué dans les réactions catalytiques sur la surface des feuilles métalliques. Ceci réduirait drastiquement la barrière de la décomposition de la matière première et augmenterait la fourniture d'espèces carbonées de plusieurs ordres de grandeur, ce qui permet une croissance rapide. Ce procédé résout de nombreux problèmes dans le domaine de la croissance de graphène monocristallin de grande taille, tels que des substrats monocristallin coûteux, un prétraitement complexe des feuilles métalliques et un cycle de croissance relativement long. Par conséquent, notre technique permet la synthèse d'un monocristal de grande taille dans un temps très court et avec un bon rapport coût-efficacité.
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Designated States: AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KN, KP, KR, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW
African Regional Intellectual Property Organization (ARIPO) (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW)
Eurasian Patent Office (AM, AZ, BY, KG, KZ, RU, TJ, TM)
European Patent Office (EPO) (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG)
Publication Language: English (EN)
Filing Language: English (EN)