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1. (WO2017041334) LATERAL-DIODE, VERTICAL-SCR HYBRID STRUCTURE FOR HIGH-LEVEL ESD PROTECTION

Pub. No.:    WO/2017/041334    International Application No.:    PCT/CN2015/090677
Publication Date: Fri Mar 17 00:59:59 CET 2017 International Filing Date: Sat Sep 26 01:59:59 CEST 2015
IPC: H01L 27/02
Applicants: HONG KONG APPLIED SCIENCE AND TECHNOLOGY RESEARCH INSTITUTE CO., LTD.
Inventors: CAI, Xiaowu
YAN, Beiping
CHEN, Zhongzi
Title: LATERAL-DIODE, VERTICAL-SCR HYBRID STRUCTURE FOR HIGH-LEVEL ESD PROTECTION
Abstract:
A lateral p-n diode in the center of and surrounded by a vertical Silicon-Controlled Rectifier (SCR) forms an Electro-Static-Discharge (ESD) protection structure. The lateral p-n diode has a cross-shaped P+ diode tap with four rectangles of N+ diode regions in each corner of the cross. A P-well under the P+ diode tap is also an anode of a vertical PNPN SCR that has a deep N-well in a P-substrate. The deep N-well surrounds the lateral diode. Triggering MOS transistors are formed just beyond the four ends of the cross shaped P+ diode tap. Each triggering MOS transistor has N+ regions at the edge of the deep N-well and in the P-substrate that act as the cathode terminals. A deep P+ implant region under the N+ region at the edge of the deep N-well decreases a trigger voltage of the vertical SCR.